| Citation: |
Han Kefeng, Cao Shengguo, Tan Xi, Yan Na, Wang Junyu, Tang Zhangwen, Min Hao. A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers[J]. Journal of Semiconductors, 2010, 31(12): 125005. doi: 10.1088/1674-4926/31/12/125005
Han K F, Cao S G, Tan X, Yan N, Wang J Y, Tang Z W, Min H. A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers[J]. J. Semicond., 2010, 31(12): 125005. doi: 10.1088/1674-4926/31/12/125005.
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A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers
doi: 10.1088/1674-4926/31/12/125005
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Abstract
A two-stage differential linear power amplifier (PA) fabricated by 0.18 μm CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power, efficiency and harmonic performance. Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency (PAE) is 35.4%, the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled. The total area with ESD protected PAD is 1.2 × 0.55 mm2. System measurements also show that this power amplifier meets the design specifications and can be applied for RFID reader.-
Keywords:
- CMOS
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