Fig. 1.
Test position of the step height and dishing on the 300 mm copper pattern wafer.
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Kangda Yin, Shengli Wang, Yuling Liu, Chenwei Wang, Xiang Li. Evaluation of planarization capability of copper slurry in the CMP process[J]. Journal of Semiconductors, 2013, 34(3): 036002. doi: 10.1088/1674-4926/34/3/036002
K D Yin, S L Wang, Y L Liu, C W Wang, X Li. Evaluation of planarization capability of copper slurry in the CMP process[J]. J. Semicond., 2013, 34(3): 036002. doi: 10.1088/1674-4926/34/3/036002.
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Evaluation of planarization capability of copper slurry in the CMP process
doi: 10.1088/1674-4926/34/3/036002
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Abstract
The evaluation methods of planarization capability of copper slurry are investigated. Planarization capability and material removal rate are the most essential properties of slurry. The goal of chemical mechanical polishing (CMP) is to achieve a flat and smooth surface. Planarization capability is the elimination capability of the step height on the copper pattern wafer surface, and reflects the passivation capability of the slurry to a certain extent. Through analyzing the planarization mechanism of the CMP process and experimental results, the planarization capability of the slurry can be evaluated by the following five aspects:pressure sensitivity, temperature sensitivity, static etch rate, planarization efficiency and saturation properties. -
References
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