Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 306-308

Enhancement Mode Thin Film Transistor with Nitrogen-Doped ZnO Channel Layer Fabricated on SiO2/Si Substrate

Zhang Xin'an, Zhang Jingwen, Wang Dong, Bi Zhen, Bian Xuming, Zhang Weifeng and Hou Xun

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Abstract: Nitrogen-doped ZnO film is deposited on SiO2/P-Si substrate by L-MBE in the mixed gas of NH3 and O2. XRD measurement shows the film has high crystalline quality and high c-axis preferential orientation even doped with nitrogen. The FWHM of rocking curve of ZnO(0002)plane is only 1.89º. Then,a bottom.gate type thin film transistor with nitrogen doped ZnO as the active channel layer and SiO2 severed as insulator is fabricated.Electrical measurement shows the device opcrates in enhancement mode and exhibits all on/off ratio of 104. The threshold voltage is 5.15V and the channel mobility oil the order of 2.66cm2/(V·s) is determined.

Key words: :ZnO thin filmL-MBEthin film transistorchannel mobility

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Zhang Xin'an, Zhang Jingwen, Wang Dong, Bi Zhen, Bian Xuming, Zhang Weifeng, Hou Xun. Enhancement Mode Thin Film Transistor with Nitrogen-Doped ZnO Channel Layer Fabricated on SiO2/Si Substrate[J]. Journal of Semiconductors, 2007, In Press. Zhang X, Zhang J W, Wang D, Bi Z, Bian X M, Zhang W F, Hou X. Enhancement Mode Thin Film Transistor with Nitrogen-Doped ZnO Channel Layer Fabricated on SiO2/Si Substrate[J]. Chin. J. Semicond., 2007, 28(S1): 306.Export: BibTex EndNote
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      Zhang Xin'an, Zhang Jingwen, Wang Dong, Bi Zhen, Bian Xuming, Zhang Weifeng, Hou Xun. Enhancement Mode Thin Film Transistor with Nitrogen-Doped ZnO Channel Layer Fabricated on SiO2/Si Substrate[J]. Journal of Semiconductors, 2007, In Press.

      Zhang X, Zhang J W, Wang D, Bi Z, Bian X M, Zhang W F, Hou X. Enhancement Mode Thin Film Transistor with Nitrogen-Doped ZnO Channel Layer Fabricated on SiO2/Si Substrate[J]. Chin. J. Semicond., 2007, 28(S1): 306.
      Export: BibTex EndNote

      Enhancement Mode Thin Film Transistor with Nitrogen-Doped ZnO Channel Layer Fabricated on SiO2/Si Substrate

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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