| Citation: |
Luo Weijun, Chen Xiaojuan, Li Chengzhan, Liu Xinyu, He Zhijing, Wei Ke, Liang Xiaoxin, Wang Xiaoliang. Fabrication of a High-Performance 1mm AlGaN/GaN HEMT on SiC Substrate[J]. Journal of Semiconductors, 2006, In Press.
Luo W J, Chen X J, Li C Z, Liu X Y, He Z J, Wei K, Liang X X, Wang X L. Fabrication of a High-Performance 1mm AlGaN/GaN HEMT on SiC Substrate[J]. Chin. J. Semicond., 2006, 27(11): 1981.
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Fabrication of a High-Performance 1mm AlGaN/GaN HEMT on SiC Substrate
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Abstract
This paper reports a high-performance AlGaN/GaN HEMT with 1 mm gate width on 6H-SiC substrate.The epitaxial materials of the device are grown with metal organic chemical vapor deposition.Test results indicate that the gate length of the device is 0.8μm,the output current density is 1.16A/mm,the transconductance is 241mS/mm,the breakdown voltage is greater than 80V,the current gain cutoff frequency reaches 20GHz,and the power gain cutoff frequency is 28GHz.The power gain of a continuous wave at 5.4GHz is 14.2dB,with an output power of 4.1W,while the corresponding results of pulsed power test are 14.4dB and 5.2W.Two ports impedance characteristics demonstrate good potential in microwave applications.-
Keywords:
- AlGaN/GaN,
- HEMT,
- microwave power,
- power gain
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