Chin. J. Semicond. > 2003, Volume 24 > Issue 8 > 803-808
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一种用于提取LDD结构n-MOSFET热载流子应力下界面陷阱产生的改进方法(英文)

杨国勇 , 毛凌锋 , 王金延 , 霍宗亮 , 王子欧 , 许铭真 and 谭长华

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Key words: 热载流子应力, LDD结构, 超薄栅氧化层, 两步退化机制

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(8): 803-808
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      • Received Date: 2015-08-20

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