J. Semicond. > 2008, Volume 29 > Issue 9 > 1674-1678

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Characterization of Phosphorus Diffused ZnO Bulk Single Crystals

Zhang Rui, Zhang Fan, Zhao Youwen, Dong Zhiyuan and Yang Jun

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Abstract: Phosphorus was diffused into CVT grown undoped ZnO bulk single crystals at 550 and 800℃ in a closed quartz tube.The P-diffused ZnO single crystals were characterized by the Hall effect,X-ray photoelectron spectroscopy (XPS),photoluminescence spectroscopy (PL),and Raman scattering.The P-diffused ZnO single crystals are n-type and have higher free electron concentration than undoped ZnO,especially for the sample diffused at 800℃.The PL measurement reveals defect related visible broad emissions in the range of 420~550nm in the P-diffused ZnO samples.The XPS result suggests that most of the P atoms substitute in the Zn site after they diffuse into the ZnO single crystal at 550℃,while the P atom seems to occupy the O site in the ZnO samples diffused at 800℃.A high concentration of shallow donor defect forms in the P-diffused ZnO,resulting in an apparent increase of free electron concentration.

Key words: diffusiondefectZnOphosphorus

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    Received: 18 August 2015 Revised: 27 May 2008 Online: Published: 01 September 2008

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      Zhang Rui, Zhang Fan, Zhao Youwen, Dong Zhiyuan, Yang Jun. Characterization of Phosphorus Diffused ZnO Bulk Single Crystals[J]. Journal of Semiconductors, 2008, In Press. Zhang R, Zhang F, Zhao Y W, Dong Z Y, Yang J. Characterization of Phosphorus Diffused ZnO Bulk Single Crystals[J]. J. Semicond., 2008, 29(9): 1674.Export: BibTex EndNote
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      Zhang Rui, Zhang Fan, Zhao Youwen, Dong Zhiyuan, Yang Jun. Characterization of Phosphorus Diffused ZnO Bulk Single Crystals[J]. Journal of Semiconductors, 2008, In Press.

      Zhang R, Zhang F, Zhao Y W, Dong Z Y, Yang J. Characterization of Phosphorus Diffused ZnO Bulk Single Crystals[J]. J. Semicond., 2008, 29(9): 1674.
      Export: BibTex EndNote

      Characterization of Phosphorus Diffused ZnO Bulk Single Crystals

      • Received Date: 2015-08-18
      • Accepted Date: 2008-04-13
      • Revised Date: 2008-05-27
      • Published Date: 2008-09-03

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