Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 186-189
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Semi-Insulating Long InP Single Crystal Growth

Sun Niefeng, Mao Luhong, Guo Weilian, Zhou Xiaolong, Yang Ruixia, Zhang Weiyu and Sun Tongnian

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Abstract: Long-length 50，75，100mm semi·insulating InP single crystals have been grown by HP-LEC method. The maximum total length of the 50ram single crystal part was 190mm，the maximum total length of the 75 and 100mm single crystal was 150mm.The key technologies of reducing twining were also discussed.

Key words: InP, twining, diameter

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 186-189
      Sun Niefeng, Mao Luhong, Guo Weilian, Zhou Xiaolong, Yang Ruixia, Zhang Weiyu, Sun Tongnian. Semi-Insulating Long InP Single Crystal Growth[J]. Journal of Semiconductors, 2007, In Press. Sun N F, Mao L H, Guo W L, Zhou X L, Yang R X, Zhang W Y, Sun T N. Semi-Insulating Long InP Single Crystal Growth[J]. Chin. J. Semicond., 2007, 28(S1): 186.Export: BibTex EndNote
      Citation:
      Sun Niefeng, Mao Luhong, Guo Weilian, Zhou Xiaolong, Yang Ruixia, Zhang Weiyu, Sun Tongnian. Semi-Insulating Long InP Single Crystal Growth[J]. Journal of Semiconductors, 2007, In Press.

      Sun N F, Mao L H, Guo W L, Zhou X L, Yang R X, Zhang W Y, Sun T N. Semi-Insulating Long InP Single Crystal Growth[J]. Chin. J. Semicond., 2007, 28(S1): 186.
      Export: BibTex EndNote
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      Semi-Insulating Long InP Single Crystal Growth

      • School of Electronic Information Engineering，Tianjin University，Tianjin 300072，China

      • National Key Laboratory of ASIC，Hebei Semiconductor Research Institute，Shijiazhuang 050051，China,School of Electronic Information Engineering，Tianjin University，Tianjin 300072，China,School of Electronic Information Engineering，Tianjin University，Tianjin 300072，China,National Key Laboratory of ASIC，Hebei Semiconductor Research Institute，Shijiazhuang 050051，China

      • School of Electrical Engineeringand Information Technology，hebei University of Technology，Tianjin 300130，China,School of Electrical Engineeringand Information Technology，hebei University of Technology，Tianjin 300130，China,School of Electronic Information Engineering，Tianjin University，Tianjin 300072，China

      • Department of Electromechnical Engineering，Tianjin Agricultural University，Tianjin 300384，China and School of Electronic Information Engineering，Tianjin University，Tianjin 300072，China

      • Department of Electromechnical Engineering，Tianjin Agricultural University，Tianjin 300384，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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