| Citation: |
Zhang Xianjun, Yang Yintang, Chai Changchun, Duan Baoxing, Song Kun, Chen Bin. Effect of a gate buffer layer on the performance of a 4H-SiC Schottky barrier field-effect transistor[J]. Journal of Semiconductors, 2012, 33(7): 074003. doi: 10.1088/1674-4926/33/7/074003
Zhang X J, Yang Y T, Chai C C, Duan B X, Song K, Chen B. Effect of a gate buffer layer on the performance of a 4H-SiC Schottky barrier field-effect transistor[J]. J. Semicond., 2012, 33(7): 074003. doi: 10.1088/1674-4926/33/7/074003.
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Effect of a gate buffer layer on the performance of a 4H-SiC Schottky barrier field-effect transistor
doi: 10.1088/1674-4926/33/7/074003
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Abstract
A lower doped layer is inserted between the gate and channel layer and its effect on the performance of a 4H-SiC Schottky barrier field-effect transistor (MESFET) is investigated. The dependences of the drain current and small signal parameters on this inserted gate-buffer layer are obtained by solving one-dimensional (1-D) and two-dimensional (2-D) Poisson's equations. The drain current and small signal parameters of the 4H-SiC MESFET with a gate-buffer layer thickness of 0.15 μm are calculated and the breakdown characteristics are simulated. The results show that the current is increased by increasing the thickness of the gate-buffer layer; the breakdown voltage is 160 V, compared with 125 V for the conventional 4H-SiC MESFET; the cutoff frequency is 27 GHz, which is higher than 20 GHz of the conventional structure due to the lower doped gate-buffer layer.-
Keywords:
- 4H-SiC
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] -
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