SEMICONDUCTOR DEVICES

A 220 GHz dynamic frequency divider in 0.5 μm InP DHBT technology

Wei Cheng, Youtao Zhang, Yuan Wang, Bin Niu, Haiyan Lu, Long Chang and Junling Xie

+ Author Affiliations

 Corresponding author: Cheng Wei, Email: dspbuilder@163.com

PDF

Abstract: A high performance 3 inch 0.5 μm InP DHBT technology with three interconnecting layers has been developed. The epitaxial layer structure and geometry parameters of the device were carefully studied to get the required performances. The 0.5×5 μm2 InP DHBTs demonstrated ft=350 GHz, fmax=532 GHz and BVCEO=4.8 V, which were modeled using Agilent-HBT large signal model. As a benchmark circuit, a dynamic frequency divider operating from 110 to 220 GHz has been designed, fabricated and measured with this technology. The ultra-high-speed 0.5 μm InP DHBT technology offers a combination of ultra-high-speed and high breakdown voltage, which makes it an ideal candidate for next generation 100 GHz+ mixed signal integrated circuits.

Key words: InPheterojunction bipolar transistordynamic frequency divider



[1]
Urteaga M, Pierson R, Rowell P, et al. 130 nm InP DHBTs with ft > 0.52 THz and fmax > 1.1 THz. Device Research Conference (DRC), 2011: 281 https://www.researchgate.net/publication/252043573_130nm_InP_DHBTs_with_ft_052THz_and_fmax_11THz
[2]
Griffith Z, Urteaga M, Pierson R, et al. A 204.8 GHz static divide-by-8 frequency divider in 250 nm InP HBT. IEEE Compound Semiconductor Integrated Circuit Symposium, 2010: 1 https://www.researchgate.net/publication/241175684_A_2048GHz_static_divide-by-8_frequency_divider_in_250nm_InP_HBT
[3]
Seo M, Urteaga M, Young A, et al. A 305-330+GHz 2:1 dynamic frequency divider using InP HBTs. IEEE Microwave Wireless Compon Lett, 2010, 20(8): 468 doi: 10.1109/LMWC.2010.2050871
[4]
Griffith Z, Urteaga M, Rowell P, et al. A 23.2 dBm at 210 GHz to 21.0 dBm at 235 GHz 16-way PA-cell combined InP HBT SSPA MMIC. IEEE Compound Semiconductor Integrated Circuit Symposium, 2014: 1 https://www.researchgate.net/publication/281671435_A_6-10_mW_power_amplifier_at_290-3075_GHz_in_250_nm_InP_HBT
[5]
Zhong Y H, Su Y B, Jin Z, et al. An InGaAs/InP W-band dynamic frequency divider. J Infrared Millimeter Waves, 2012, 31(5): 393 doi: 10.3724/SP.J.1010.2012.00393
[6]
Cheng W, Zhang Y T, Wang Y, et al. Ultra high speed static and dynamic dividers in InP HBT technology. Res Prog Solid State Electron, 2014, 34(6): F0003 https://www.researchgate.net/publication/3388536_Low-power_static_frequency_divider_using_an_InP-based_monolithic_RTDHBT_technology
[7]
Cheng W, Zhang Y T, Wang Y, et al. 100 GHz static and dynamic frequency dividers in InP HBT technology. Res Prog Solid State Electron, 2015, 35(4): F0003 http://ieeexplore.ieee.org/document/1179527/
[8]
Amin N M, Wang Z G, Li Z Q, et al. A low power, low noise figure quadrature demodulator for a 60 GHz receiver in 65-nm CMOS technology. J Semicond, 2015, 36(4): 045005 doi: 10.1088/1674-4926/36/4/045005
[9]
Zhang J C, Zhang Y M, Lü H L. A broadband regenerative frequency divider in InGaP/GaAs HBT technology. J Semicond, 2014, 35(7): 075004 doi: 10.1088/1674-4926/35/7/075004
[10]
Liu F E, Wang Z G, Li Z Q, et al. A Ka-band wide locking range frequency divider with high injection sensitivity. J Semicond, 2014, 35(3): 035002 doi: 10.1088/1674-4926/35/3/035002
[11]
Zhang Y T, Li X P, Zhang M, et al. A 83 GHz InP DHBT static frequency divider. J Semicond, 2014, 35(4): 045004 doi: 10.1088/1674-4926/35/4/045004
[12]
Cheng W, Wang Y, Zhao Y, et al. A THz InGaAs/InP double heterojunction bipolar transistor with fmax of 416 GHz. Res Prog Solid State Electron, 2013, 33(6): F0003 http://ieeexplore.ieee.org/ieee_pilot/articles/96jproc02/96jproc02-rodwell/article.html
[13]
Cheng W, Wang Y, Zhao Y, et al. A THz InGaAs/InP double heterojunction bipolar transistor with fmax=325 GHz and BV_CBO=10.6 V. J Semicond, 2013, 34(5): 76 doi: 10.1088/1674-4926/34/5/054006/meta
[14]
Cheng W, Jin Z, Yu J Y, et al. Design of InGaAsP composite collector for InP DHBT. J Semicond, 2008, 28(6): 943 https://www.researchgate.net/publication/289265854_Design_of_InGaAsP_composite_collector_for_InP_DHBT
[15]
Cheng W, Jin Z, Su Y B, et al. Composite-collector InGaAs/InP double heterostructure bipolar transistors with current-gain cut-off frequency of 242 GHz. Chin Phys Lett, 2009, 26(3): 298 doi: 10.1088/0256-307X/26/3/038502
Fig. 1.  Simulated JKirk and BVCEO versus TC.

Fig. 2.  Simulated fmax versus geometry parameters: (a) WEC and WBE, (b) WEC and WBC.

Fig. 3.  Cross-section of the 0.5 μm InP DHBT technology.

Fig. 4.  Modeled (lines) versus measured (cross symbols) S-parameters.

Fig. 5.  Simplified schematic of the dynamic divider core.

Fig. 6.  SEM picture of a 0.5×5 μm2 InP DHBT.

Fig. 7.  Common-emitter current-voltage characteristics of a 0.5×5 μm2 DHBT.

Fig. 8.  H21, MSG/MAG and U for a 0.5×5 μm2 DHBT versus frequency at VCE=1.5 V and IC=11 mA.

Fig. 9.  Photo of the dynamic frequency divider.

Fig. 10.  Measurement system of the dynamic frequency divider: (a) W-band, (b) G-band.

Fig. 11.  Output spectrums for the dynamic frequency divider: (a) 110GHz input, (b) 150 GHz input.

Fig. 12.  Output spectrums for the dynamic frequency divider: (a) 170 GHz input, (b) 220 GHz input.

Table 1.   InP DHBT epitaxial layer structure.

Table 2.   Comparison of InP DHBT dynamic frequency dividers.

[1]
Urteaga M, Pierson R, Rowell P, et al. 130 nm InP DHBTs with ft > 0.52 THz and fmax > 1.1 THz. Device Research Conference (DRC), 2011: 281 https://www.researchgate.net/publication/252043573_130nm_InP_DHBTs_with_ft_052THz_and_fmax_11THz
[2]
Griffith Z, Urteaga M, Pierson R, et al. A 204.8 GHz static divide-by-8 frequency divider in 250 nm InP HBT. IEEE Compound Semiconductor Integrated Circuit Symposium, 2010: 1 https://www.researchgate.net/publication/241175684_A_2048GHz_static_divide-by-8_frequency_divider_in_250nm_InP_HBT
[3]
Seo M, Urteaga M, Young A, et al. A 305-330+GHz 2:1 dynamic frequency divider using InP HBTs. IEEE Microwave Wireless Compon Lett, 2010, 20(8): 468 doi: 10.1109/LMWC.2010.2050871
[4]
Griffith Z, Urteaga M, Rowell P, et al. A 23.2 dBm at 210 GHz to 21.0 dBm at 235 GHz 16-way PA-cell combined InP HBT SSPA MMIC. IEEE Compound Semiconductor Integrated Circuit Symposium, 2014: 1 https://www.researchgate.net/publication/281671435_A_6-10_mW_power_amplifier_at_290-3075_GHz_in_250_nm_InP_HBT
[5]
Zhong Y H, Su Y B, Jin Z, et al. An InGaAs/InP W-band dynamic frequency divider. J Infrared Millimeter Waves, 2012, 31(5): 393 doi: 10.3724/SP.J.1010.2012.00393
[6]
Cheng W, Zhang Y T, Wang Y, et al. Ultra high speed static and dynamic dividers in InP HBT technology. Res Prog Solid State Electron, 2014, 34(6): F0003 https://www.researchgate.net/publication/3388536_Low-power_static_frequency_divider_using_an_InP-based_monolithic_RTDHBT_technology
[7]
Cheng W, Zhang Y T, Wang Y, et al. 100 GHz static and dynamic frequency dividers in InP HBT technology. Res Prog Solid State Electron, 2015, 35(4): F0003 http://ieeexplore.ieee.org/document/1179527/
[8]
Amin N M, Wang Z G, Li Z Q, et al. A low power, low noise figure quadrature demodulator for a 60 GHz receiver in 65-nm CMOS technology. J Semicond, 2015, 36(4): 045005 doi: 10.1088/1674-4926/36/4/045005
[9]
Zhang J C, Zhang Y M, Lü H L. A broadband regenerative frequency divider in InGaP/GaAs HBT technology. J Semicond, 2014, 35(7): 075004 doi: 10.1088/1674-4926/35/7/075004
[10]
Liu F E, Wang Z G, Li Z Q, et al. A Ka-band wide locking range frequency divider with high injection sensitivity. J Semicond, 2014, 35(3): 035002 doi: 10.1088/1674-4926/35/3/035002
[11]
Zhang Y T, Li X P, Zhang M, et al. A 83 GHz InP DHBT static frequency divider. J Semicond, 2014, 35(4): 045004 doi: 10.1088/1674-4926/35/4/045004
[12]
Cheng W, Wang Y, Zhao Y, et al. A THz InGaAs/InP double heterojunction bipolar transistor with fmax of 416 GHz. Res Prog Solid State Electron, 2013, 33(6): F0003 http://ieeexplore.ieee.org/ieee_pilot/articles/96jproc02/96jproc02-rodwell/article.html
[13]
Cheng W, Wang Y, Zhao Y, et al. A THz InGaAs/InP double heterojunction bipolar transistor with fmax=325 GHz and BV_CBO=10.6 V. J Semicond, 2013, 34(5): 76 doi: 10.1088/1674-4926/34/5/054006/meta
[14]
Cheng W, Jin Z, Yu J Y, et al. Design of InGaAsP composite collector for InP DHBT. J Semicond, 2008, 28(6): 943 https://www.researchgate.net/publication/289265854_Design_of_InGaAsP_composite_collector_for_InP_DHBT
[15]
Cheng W, Jin Z, Su Y B, et al. Composite-collector InGaAs/InP double heterostructure bipolar transistors with current-gain cut-off frequency of 242 GHz. Chin Phys Lett, 2009, 26(3): 298 doi: 10.1088/0256-307X/26/3/038502
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3152 Times PDF downloads: 31 Times Cited by: 0 Times

    History

    Received: 07 June 2016 Revised: 07 October 2016 Online: Published: 01 May 2017

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Wei Cheng, Youtao Zhang, Yuan Wang, Bin Niu, Haiyan Lu, Long Chang, Junling Xie. A 220 GHz dynamic frequency divider in 0.5 μm InP DHBT technology[J]. Journal of Semiconductors, 2017, 38(5): 054008. doi: 10.1088/1674-4926/38/5/054008 W Cheng, Y T Zhang, Y Wang, B Niu, H Y Lu, L Chang, J L Xie. A 220 GHz dynamic frequency divider in 0.5 μm InP DHBT technology[J]. J. Semicond., 2017, 38(5): 054008. doi: 10.1088/1674-4926/38/5/054008.Export: BibTex EndNote
      Citation:
      Wei Cheng, Youtao Zhang, Yuan Wang, Bin Niu, Haiyan Lu, Long Chang, Junling Xie. A 220 GHz dynamic frequency divider in 0.5 μm InP DHBT technology[J]. Journal of Semiconductors, 2017, 38(5): 054008. doi: 10.1088/1674-4926/38/5/054008

      W Cheng, Y T Zhang, Y Wang, B Niu, H Y Lu, L Chang, J L Xie. A 220 GHz dynamic frequency divider in 0.5 μm InP DHBT technology[J]. J. Semicond., 2017, 38(5): 054008. doi: 10.1088/1674-4926/38/5/054008.
      Export: BibTex EndNote

      A 220 GHz dynamic frequency divider in 0.5 μm InP DHBT technology

      doi: 10.1088/1674-4926/38/5/054008
      More Information
      • Corresponding author: Cheng Wei, Email: dspbuilder@163.com
      • Received Date: 2016-06-07
      • Revised Date: 2016-10-07
      • Published Date: 2017-05-01

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return