J. Semicond. > 2015, Volume 36 > Issue 8 > 084001, doi: 10.1088/1674-4926/36/8/084001
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SEMICONDUCTOR DEVICES

Impact of parameter fluctuations on RF stability performance of DG tunnel FET

K Sivasankaran and P S Mallick

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 Corresponding author: K Sivasankaran, Email: ksivasankaran@vit.ac.in; P S Mallick, Email: psmallick@vit.ac.in

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Abstract: This paper presents the impact of parameter fluctuation due to process variation on radio frequency (RF) stability performance of double gate tunnel FET (DG TFET). The influence of parameter fluctuation due to process variation leads to DG TFET performance degradation. The RF figures of merit (FoM) such as cut-off frequency (ft), maximum oscillation frequency (fmax) along with stability factor for different silicon body thickness, gate oxide thickness and gate contact alignment are obtained from extracted device parameters through numerical simulation. The impact of parameter fluctuation of silicon body thickness, gate oxide thickness and gate contact alignment was found significant and the result provides design guidelines of DG TFET for RF applications.

Key words: DG tunnel FET, radio frequency, stability factor, numerical simulation



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Fig. 1.  Schematic structure of DG TFET.

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Fig. 2.  Id-Vg characteristics of DG tunnel FET.

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Fig. 3.  Extracted ft and fmax as a function of Vgs for Vds=1 V.

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Fig. 4.  Extracted stability factor as a function of frequency

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Fig. 5.  Impact of silicon body thickness variation on ft and fmax.

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Fig. 6.  Impact of silicon body thickness variation on fk.

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Fig. 7.  Impact of gate oxide thickness variation on ft and fmax.

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Fig. 8.  Impact of gate oxide thickness variation on fk.

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Fig. 9.  (a) Overlap and (b) underlap gate contact alignment.

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Fig. 10.  Impact of gate contact alignment variation on ft and fmax.

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Fig. 11.  Impact of gate contact alignment variation on fk.

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Fig. 12.  Stability factor as a function of frequency for different channel length.

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    Received: 25 August 2014 Revised: Online: Published: 01 August 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(8): 084001
      K Sivasankaran, P S Mallick. Impact of parameter fluctuations on RF stability performance of DG tunnel FET[J]. Journal of Semiconductors, 2015, 36(8): 084001. doi: 10.1088/1674-4926/36/8/084001 K Sivasankaran, P S Mallick. Impact of parameter fluctuations on RF stability performance of DG tunnel FET[J]. J. Semicond., 2015, 36(8): 084001. doi: 10.1088/1674-4926/36/8/084001.Export: BibTex EndNote
      Citation:
      K Sivasankaran, P S Mallick. Impact of parameter fluctuations on RF stability performance of DG tunnel FET[J]. Journal of Semiconductors, 2015, 36(8): 084001. doi: 10.1088/1674-4926/36/8/084001

      K Sivasankaran, P S Mallick. Impact of parameter fluctuations on RF stability performance of DG tunnel FET[J]. J. Semicond., 2015, 36(8): 084001. doi: 10.1088/1674-4926/36/8/084001.
      Export: BibTex EndNote
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      Impact of parameter fluctuations on RF stability performance of DG tunnel FET

      doi: 10.1088/1674-4926/36/8/084001

      • School of Electronics Engineering, VIT University, Vellore, Tamilnadu, India

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      • Corresponding author: Email: ksivasankaran@vit.ac.in; Email: psmallick@vit.ac.in
      • Received Date: 2014-08-25
      • Accepted Date: 2015-03-13
      • Published Date: 2015-01-25

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