| Citation: |
Tang Yi, Wan Xinggong, Gu Xiang, Wan Wenyuan, Zhang Huirui, Liu Yuwei. An improved HCI degradation model for a VLSI MOSFET[J]. Journal of Semiconductors, 2009, 30(12): 124005. doi: 10.1088/1674-4926/30/12/124005
Tang Y, Wan X G, Gu X, Wan W Y, Zhang H R, Liu Y W. An improved HCI degradation model for a VLSI MOSFET[J]. J. Semicond., 2009, 30(12): 124005. doi: 10.1088/1674-4926/30/12/124005.
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An improved HCI degradation model for a VLSI MOSFET
doi: 10.1088/1674-4926/30/12/124005
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Abstract
An improved hot carrier injection (HCI) degradation model was proposed based on interface trap generation and oxide charge injection theory. It was evident that the degradation behavior of electric parameters such as Idlin, Idsat, Gm and Vt fitted well with this model. Devices were prepared with 0.35 μm technology and different LDD processes. Idlin and Idsat after HCI stress were analyzed with the improved model. The effects of interface trap generation and oxide charge injection on device degradation were extracted, and the charge injection site could be obtained by this method. The work provides important information to device designers and process engineers.-
Keywords:
- HCI degradation model
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