| Citation: |
Wang Jianfeng, Zhang Jicai, Zhang Baoshun, Wu Mo, Wang Yutian, Yang Hui, Liang Junwu. Influence of Thickness of High Temperature AlN Buffer Grown on Si(111) on GaN Structure Properties[J]. Journal of Semiconductors, 2005, In Press.
Wang J F, Zhang J C, Zhang B S, Wu M, Wang Y T, Yang H, Liang J W. Influence of Thickness of High Temperature AlN Buffer Grown on Si(111) on GaN Structure Properties[J]. Chin. J. Semicond., 2005, 26(13): 109.
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Influence of Thickness of High Temperature AlN Buffer Grown on Si(111) on GaN Structure Properties
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Abstract
The influences of AlN buffer thickness on the optical and the crystalline properties of metalorganic chemical vapor deposition wurtzite GaN layers on Si(111) substrate are investigated.High-resolution X-ray diffraction and photoluminescence measurement reveal that the thickness of AlN buffer exerts a strong influence on the distribution of dislocation and stress in GaN epilayer.The evidence is further reinforced by atomic force microscopic observation of AlN nucleation process.The optimum thickness of AlN buffer to effectively suppress Si diffusion is determined by secondary-ion mass spectroscopy to be in the range of 13～20nm.-
Keywords:
- GaN,
- AlN,
- Si substrate
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References
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Proportional views
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