SEMICONDUCTOR DEVICES

Design of novel DDSCR with embedded PNP structure for ESD protection

Xiuwen Bi, Hailian Liang, Xiaofeng Gu and Long Huang

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Abstract: A novel dual-directional silicon controlled rectifier(DDSCR) device with embedded PNP structure(DDSCR-PNP) is proposed for electrostatic discharge(ESD) protection, which has greatly reduced latch-up risk owing to the improved holding voltage(Vh). Firstly, the working mechanism of the DDSCR-PNP is analyzed. The theoretical analysis indicates that the proposed device possesses good voltage clamp ability due to the embedded PNP(PNP_2). Then, experimental devices are fabricated in a 0.35μm bipolar-CMOS-DMOS process and measured with a Barth 4002 transmission line pulse testing system. The results show that the Vh of DDSCR-PNP is much higher than that of the conventional DDSCR, and can be further increased by adjusting the P well width. However, the reduced leakage current(IL) of the DDSCR-PNP shows obvious fluctuations when the P well width is increased to more than 12μm. Finally, the factors influencing Vh and IL are investigated by Sentaurus simulations. The results verify that the lateral PNP_2 helps to increase Vh and decrease IL. When the P well width is further increased, the effect of the lateral PNP_2 is weakened, causing an increased IL. The proposed DDSCR-PNP provides an effective and attractive ESD protection solution for high-voltage integrated circuits.

Key words: electrostatic dischargedual-directional silicon controlled rectifiertrigger voltageholding voltageleakage current



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Fig1.  Cross sections and equivalent circuits of (a) DDSCR and (b) DDSCR-PNP,respectively.

Fig2.  TLP $I$-$V$ curves of DDSCR and DDSCR-PNP.

Fig3.  TLP $I$-$V$ curves of DDSCR-PNP devices with different P well widths.

Fig4.  Total current density distributions in DDSCR and DDSCR-PNP under an ESD current pulse of 1 $\times$ 10-3 A.

Fig5.  Total current density distributions in DDSCR and DDSCR-PNP under an ESD current pulse of 1 $\times$ 10-6 A.

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    Received: 07 May 2015 Revised: Online: Published: 01 December 2015

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      Xiuwen Bi, Hailian Liang, Xiaofeng Gu, Long Huang. Design of novel DDSCR with embedded PNP structure for ESD protection[J]. Journal of Semiconductors, 2015, 36(12): 124007. doi: 10.1088/1674-4926/36/12/124007 X W Bi, H L Liang, X F Gu, L Huang. Design of novel DDSCR with embedded PNP structure for ESD protection[J]. J. Semicond., 2015, 36(12): 124007. doi: 10.1088/1674-4926/36/12/124007.Export: BibTex EndNote
      Citation:
      Xiuwen Bi, Hailian Liang, Xiaofeng Gu, Long Huang. Design of novel DDSCR with embedded PNP structure for ESD protection[J]. Journal of Semiconductors, 2015, 36(12): 124007. doi: 10.1088/1674-4926/36/12/124007

      X W Bi, H L Liang, X F Gu, L Huang. Design of novel DDSCR with embedded PNP structure for ESD protection[J]. J. Semicond., 2015, 36(12): 124007. doi: 10.1088/1674-4926/36/12/124007.
      Export: BibTex EndNote

      Design of novel DDSCR with embedded PNP structure for ESD protection

      doi: 10.1088/1674-4926/36/12/124007
      Funds:

      Project supported by the Fundamental Research Funds for the Central Universities(No. JUSRP51323B), the Joint Innovation Project of Jiangsu Province(No. BY2013015-19), the Summit of the Six Top Talents Program of Jiangsu Province(No. DZXX-053), and the Graduate Student Innovation Program for Universities of Jiangsu Province(Nos. KYLX_1119, SJZZ_0148).

      More Information
      • Corresponding author: Gu Xiaofeng,Email:xgu@jiangnan.edu.cn
      • Received Date: 2015-05-07
      • Accepted Date: 2015-06-10
      • Published Date: 2015-01-25

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