Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 144-147

PAPERS

Effect of Si Intermediate Layer on High Relaxed SiGe Layer Grown Using Low Temperature Si Buffer

Yang Hongbin and Fan Yongliang

+ Author Affiliations

PDF

Abstract: High relaxed SiGe layer is grown using low temperature Si buffer technology which combined with a Si intermediate layer,the effect of the Si intermediate layer on relaxed SiGe layer is investigated.This work researches the misfit dislocation etching pattern in different thickness of the SiGe epilayer using the preferential chemical etching and the optical microscopy.Furthermore the influence of intermediate Si layer on dislocation generation,propagation and strain relaxation in epitaxial SiGe layer is investigated.The results show that the intermediate Si layer remarkably changed the dislocation generation and propagation in SiGe layer,consequently the surface morphology also appeared obviously difference

Key words: SiGe strain relaxation dislocation

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2976 Times PDF downloads: 1248 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Yang Hongbin, Fan Yongliang. Effect of Si Intermediate Layer on High Relaxed SiGe Layer Grown Using Low Temperature Si Buffer[J]. Journal of Semiconductors, 2006, In Press. Yang H B, Fan Y L. Effect of Si Intermediate Layer on High Relaxed SiGe Layer Grown Using Low Temperature Si Buffer[J]. Chin. J. Semicond., 2006, 27(13): 144.Export: BibTex EndNote
      Citation:
      Yang Hongbin, Fan Yongliang. Effect of Si Intermediate Layer on High Relaxed SiGe Layer Grown Using Low Temperature Si Buffer[J]. Journal of Semiconductors, 2006, In Press.

      Yang H B, Fan Y L. Effect of Si Intermediate Layer on High Relaxed SiGe Layer Grown Using Low Temperature Si Buffer[J]. Chin. J. Semicond., 2006, 27(13): 144.
      Export: BibTex EndNote

      Effect of Si Intermediate Layer on High Relaxed SiGe Layer Grown Using Low Temperature Si Buffer

      • Received Date: 2015-08-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return