| Citation: |
Qian Jiajun, Ye Xiaoling, Chen Yonghai, Xu Bo, Han Qin, Wang Zhanguo. Lasing Characteristics of InAs/GaAs Quantum-Dot Lasers with Multistacked Dot Layer[J]. Journal of Semiconductors, 2005, In Press.
Qian J J, Ye X L, Chen Y H, Xu B, Han Q, Wang Z G. Lasing Characteristics of InAs/GaAs Quantum-Dot Lasers with Multistacked Dot Layer[J]. Chin. J. Semicond., 2005, 26(13): 184.
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Lasing Characteristics of InAs/GaAs Quantum-Dot Lasers with Multistacked Dot Layer
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Abstract
The five-fold layer quantum-dot (QD) microstructure material is grown by S-K mode with solid source molecular epitaxy technique.The internal loss coefficient (αi) of 2.1cm-1 and a transparency current density of 15±10 A/cm2 are gained.The threshold current density of 144A/cm2,light output power (both facets) of 2.67W,external differential quantum efficiency ηd=63% and a characteristic temperature T0=320K are obtained for 100μm strip and 2.4mm cavity length laser diode with uncoated facets during room temperature continuous-wave lasing. -
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