SEMICONDUCTOR INTEGRATED CIRCUITS

A common-gate bootstrapped CMOS rectifier for VHF isolated DC-DC converter

Dongfang Pan1, Feng Zhang2, , Lu Huang1 and Jinliang Li2

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 Corresponding author: Feng Zhang, zhangfeng@ia.ac.cn

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Abstract: A common-gate bootstrapped CMOS rectifier dedicated for VHF (very high frequency) isolated DC-DC converter is proposed.It uses common-gate bootstrapped technique to compensate the power loss due to the threshold voltage, and to solve the reflux problem in the conventional rectifier circuit.As a result, it improves the power conversion efficiency (PCE) and voltage conversion ratio (VCR).The design saves almost 90% of the area compared to a previously reported double capacitor structure.In addition, we compare the previous rectifier with the proposed common-gate bootstrapped rectifier in the case of the same area; simulation results show that the PCE and VCR of the proposed structure are superior to other structures.The proposed common-gate bootstrapped rectifier was fabricated by using CSMC 0.5 μm BCD process.The measured maximum PCE is 86% and VCR achieves 77% at the operating frequency of 20 MHz.The average PCE is about 79% and average VCR achieves 71% in the frequency range of 30-70 MHz.Measured PCE and VCR have been improved compared to previous results.

Key words: CMOS rectifier circuitbootstrapped techniquevery high frequencyPCEisolated DC-DC



[1]
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[5]
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[6]
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[7]
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[8]
Hashemi S S, Sawan M, Savaria Y. A high-efficiency lowvoltage CMOS rectifier for harvesting energy in implantable devices. IEEE Trans Biomed Circuits Syst, 2012, 6(4): 326 doi: 10.1109/TBCAS.2011.2177267
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[10]
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[12]
Gosset G, Rue B, Flandre D. Very high efficiency 13.56 MHz RFID input stage voltage multipliers based on ultra low power MOS diodes. IEEE Int Conf RFID, 2008: 16
Fig. 1.  (a) Full wave NMOS rectifier. (b) Full wave cross-couple PMOS rectifier. (c) Full-wave CMOS bootstrapped rectifier.

Fig. 2.  Schematics of bootstrapping technique.

Fig. 3.  (Color online) Behavior of the proposed bootstrapped structure.

Fig. 4.  Common-gate bootstrapped rectifier (CGBR).

Fig. 5.  (Color online) Waveform of CGBR.

Fig. 6.  (Color online) Simulated reflux waveform of current.

Fig. 7.  (Color online) Output voltage versus UPD and diode-connected PMOS.

Fig. 8.  (Color online) (a) Simulated PCE versus operating frequency. (b) Simulated VCR versus operating frequency.

Fig. 9.  (Color online) Photomicrograph of the prototype chip.

Fig. 10.  Measurement setup.

Fig. 11.  (Color online) (a) Measured PCE versus operating frequency. (b) Measured VCR versus operating frequency.

Table 1.   Size of MOS transistor.

Table 2.   Comparison with previous rectifier characteristics.

[1]
Sagneri A, Anderson D, Perreault D. Optimization of integrated transistors for very high frequency DC-DC converters. IEEE Trans Power Electron, 2013, 28(7): 3614 doi: 10.1109/TPEL.2012.2222048
[2]
Wang J M, Yang Z, Zhu Z M. An ultra-low-voltage rectifier for PE energy harvesting applications. J Semicond, 2016, 37(2): 025004 doi: 10.1088/1674-4926/37/2/025004
[3]
Li Z, Wang Z G, Li Z Q, et al. A 3.16-7 GHz transformer-based dual-band CMOS VCO. J Semicond, 2015, 36(3): 035003 doi: 10.1088/1674-4926/36/3/035003
[4]
Yang T, Zhu L H, Tan X, et al. A dual-mode secure UHF RFID tag with a crypto engine in 0.13μm CMOS. J Semicond, 2016, 37(7): 075003 doi: 10.1088/1674-4926/37/7/075003
[5]
Chen B. Isolated half-bridge gate driver with integrated high-side supply. IEEE Power Electronics Specialists Conference, 2008: 3615
[6]
Chen B. Fully integrated isolated DC-DC converter using micro transformers. 23rd Annual IEEE Applied Power Electronics Conference Proceedings, 2008: 335
[7]
Wu R X, Sin J K O, Hui S Y. A novel silicon-embedded coreless transformer for isolated DC-DC converter application. Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's, 2011: 23
[8]
Hashemi S S, Sawan M, Savaria Y. A high-efficiency lowvoltage CMOS rectifier for harvesting energy in implantable devices. IEEE Trans Biomed Circuits Syst, 2012, 6(4): 326 doi: 10.1109/TBCAS.2011.2177267
[9]
Kotani K, Ito T. High efficiency CMOS rectifier circuits for UHF RFIDs using Vth cancellation techniques. Proc IEEE 8th Conf ASIC, Changsha, China, 2009: 20
[10]
Le T, Han J, von Jouanne A, et al. Piezoelectric micro power generation interface circuits. IEEE J Solid-State Circuits, 2006, 41(6): 1411 doi: 10.1109/JSSC.2006.874286
[11]
Gosset G, Flandre D. A very high efficiency ultra-low-power 13.56 MHz voltage rectifier in 150 nm SOI CMOS. IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2009: 347
[12]
Gosset G, Rue B, Flandre D. Very high efficiency 13.56 MHz RFID input stage voltage multipliers based on ultra low power MOS diodes. IEEE Int Conf RFID, 2008: 16
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    Received: 04 August 2016 Revised: 04 November 2016 Online: Published: 01 May 2017

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      Dongfang Pan, Feng Zhang, Lu Huang, Jinliang Li. A common-gate bootstrapped CMOS rectifier for VHF isolated DC-DC converter[J]. Journal of Semiconductors, 2017, 38(5): 055002. doi: 10.1088/1674-4926/38/5/055002 D F Pan, F Zhang, L Huang, J L Li. A common-gate bootstrapped CMOS rectifier for VHF isolated DC-DC converter[J]. J. Semicond., 2017, 38(5): 055002. doi: 10.1088/1674-4926/38/5/055002.Export: BibTex EndNote
      Citation:
      Dongfang Pan, Feng Zhang, Lu Huang, Jinliang Li. A common-gate bootstrapped CMOS rectifier for VHF isolated DC-DC converter[J]. Journal of Semiconductors, 2017, 38(5): 055002. doi: 10.1088/1674-4926/38/5/055002

      D F Pan, F Zhang, L Huang, J L Li. A common-gate bootstrapped CMOS rectifier for VHF isolated DC-DC converter[J]. J. Semicond., 2017, 38(5): 055002. doi: 10.1088/1674-4926/38/5/055002.
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      A common-gate bootstrapped CMOS rectifier for VHF isolated DC-DC converter

      doi: 10.1088/1674-4926/38/5/055002
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      • Corresponding author: Feng Zhang, zhangfeng@ia.ac.cn
      • Received Date: 2016-08-04
      • Revised Date: 2016-11-04
      • Published Date: 2017-05-01

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