| Citation: |
Liu Jiang, Wang Xueqiang, Wang Qin, Wu Dong, Zhang Zhigang, Pan Liyang, Liu Ming. A low-voltage sense amplifier for high-performance embedded flash memory[J]. Journal of Semiconductors, 2010, 31(10): 105001. doi: 10.1088/1674-4926/31/10/105001
Liu J, Wang X Q, Wang Q, Wu D, Zhang Z G, Pan L Y, Liu M. A low-voltage sense amplifier for high-performance embedded flash memory[J]. J. Semicond., 2010, 31(10): 105001. doi: 10.1088/1674-4926/31/10/105001.
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A low-voltage sense amplifier for high-performance embedded flash memory
doi: 10.1088/1674-4926/31/10/105001
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Abstract
This paper presents a sense amplifier scheme for low-voltage embedded flash (eFlash) memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies.-
Keywords:
- sense amplifier,
- current mode,
- embedded flash memory,
- low voltage
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References
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