Chin. J. Semicond. > 2005, Volume 26 > Issue 2 > 390-394

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Abstract: 在新型的共振隧穿二极管(RTD)器件与PHEMT器件单片集成材料结构上,研究和分析了分立器件的制作工艺,给出了分立器件的制作工艺参数.利用上述工艺成功制作了RTD和PHEMT器件,并在室温下分别测试了RTD器件和PHEMT器件的电学特性.测试表明:在室温下,RTD器件的峰电流密度与谷电流密度之比提高到1.78;PHEMT器件的最大跨导约为120mS/mm,在Vgs=0.5V时的饱和电流约为270mA/mm.这将为RTD集成电路的研制奠定工艺基础.

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2005

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      RTD与PHEMT集成的几个关键工艺[J]. Journal of Semiconductors, 2005, In Press. RTD与PHEMT集成的几个关键工艺[J]. Chin. J. Semicond., 2005, 26(2): 390.Export: BibTex EndNote
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      RTD与PHEMT集成的几个关键工艺[J]. Journal of Semiconductors, 2005, In Press.

      RTD与PHEMT集成的几个关键工艺[J]. Chin. J. Semicond., 2005, 26(2): 390.
      Export: BibTex EndNote

      RTD与PHEMT集成的几个关键工艺

      • Received Date: 2015-08-19

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