J. Semicond. > 2016, Volume 37 > Issue 6 > 065006, doi: 10.1088/1674-4926/37/6/065006
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SEMICONDUCTOR INTEGRATED CIRCUITS

A double-stage start-up structure to limit the inrush current used in current mode charge pump

Cong Liu1, 2, , Xinquan Lai1, 2, Hanxiao Du1, 2 and Yuan Chi1, 2

+ Author Affiliations

 Corresponding author: Cong Liu, Email: liucong4213@163.com

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Abstract: A double-stage start-up structure to limit the inrush current used in current-mode charge pump with wide input range, fixed output and multimode operation is presented in this paper. As a widely utilized power source implement, a Li-battery is always used as the power supply for chips. Due to the internal resistance, a potential drop will be generated at the input terminal of the chip with an input current. A false shut down with a low supply voltage will happen if the input current is too large, leading to the degradation of the Li-battery's service life. To solve this problem, the inrush current is limited by introducing a new start-up state. All of the circuits have been implemented with the NUVOTON 0.6 μm CMOS process. The measurement results show that the inrush current can be limited below 1 A within all input supply ranges, and the power efficiency is higher than the conventional structure.

Key words: charge pump, current mode, inrush current, multimode operation, double-stage start-up



[1]
Cabrini A, Fantini A, Torelli G. High-efficiency regulator for on-chip charge pump voltage elevators. Electron Lett, 2006, 42(17):972
[2]
Wu C, Chen C. High-efficiency current-regulated charge pump for a white LED driver. IEEE Trans Circuits Syst Ⅱ, 2009, 56(10):763
[3]
Hwu K, Peng T. High-voltage-boosting converter with charge pump capacitor and coupling inductor combined with buck-boost converter. IET Power Electronics, 2014, 7(1):177
[4]
Zheng C, Chowdhury I, Ma D. Low-noise switched-capacitor power converter with adaptive on-chip surge suppression and pre-emptive timing control. IEEE Trans Power Electron, 2013, 28(11):5174
[5]
Sittisak C, Jirawath P. Low swing CMOS current mode charge pump. ICCAS, 2010 Int Conf, Gyeonggi-do, Korea (South), Oct 2010:1383
[6]
Lin R, Shih H. Piezoelectric transformer based current-source charge-pump power-factor-correction electronic ballast. IEEE Trans Power Electron, 2008, 23(3):1391
[7]
Hsieh Z, Huang N, Shiau M, et al. A novel mixed-structure design for high-efficiency charge pump. MIXDES-16th Int Conf, Lodz, Poland, June 2009:210
[8]
Yu W, Hutchens C, Lai J, et al. High efficiency converter with charge pump and coupled inductor for wide input photovoltaic AC module applications. ECCE 2009 IEEE, San Jose, USA, Sept 2009:3895
[9]
Tseng H T, Chen J F. Voltage compensation-type inrush current limiter for reducing power transformer inrush current. IET Electric Power Appl, 2012, 6(2):101
[10]
Wang X, Sun Y, Li T, et al. Active closed-loop gate voltage control method to mitigate metal oxide semiconductor field-effect transistor turn-off voltage overshoot and ring. IET Power Electron, 2013, 6(8):1715
[11]
Tsang C, Foster M, Stone D. Active current ripple cancellation in parallel connected buck converter modules. IET Power Electron, 2013, 6(4):721
[12]
Kuperman A, Aharon I, Malki S, et al. Design of a semiactive battery-ultracapacitor hybrid energy source. IEEE Trans Power Electron, 2013, 28(2):806
[13]
Yu W, Lai J. Ultra high efficiency bidirectional DC-DC converter with multi-frequency pulse width modulation. APEC 2008 Twenty-Third Annual IEEE, Austin, USA, Feb. 2008:1079
[14]
Honggang S, Fei W. A fault detection and protection scheme for three-level DC-DC converters based on monitoring flying capacitor voltage. IEEE Trans Power Electron, 2012, 27(2):685
[15]
Saiz-Vela A, Miribel P, Colomer J. Ripple reduction on skipping-based regulated two-phase voltage doubler charge pump. Electron Lett, 2009, 45(20):1050
[16]
Yuan B, Lai X. On-chip CMOS current-sensing circuit for DC-DC buck convertor. Electron Lett, 2009, 14(2):102
[17]
Mohammad M G, Ahmad M J, AI-Bakheet M B. Switched positive/negative charge pump design using standard CMOS transistors. IET Circuits Devices Systems, 2010, 4(1):57
[18]
Jyoti G, Ankur S, Hemlata V. High speed CMOS charge pump circuit for PLL applications using 90 nm CMOS technology. WICT 2011 World Conf, Mumbai, India, Dec. 2011:346
[19]
Marcos P, Pfitscher L, Lopes L, et al. Voltage multiplier cells applied to non-isolated DC-DC converters. IEEE Trans Power Electron, 2008, 23(2):871
[20]
Nuvoton Corp. 0.6μm CMOS process, accessed Dec. 2012 https://download.nuvoton.com/NuvotonMoss/DownloadService/member/DownloadPages.aspx
[21]
Cheng K W, Divakar B P, Wu H, et al. Battery-management system (BMS) and SOC development for electrical vehicles. IEEE Trans Vehicle Technology, 2011, 60(1):76
[22]
Antoni S, Chang Y. Battery management system based on battery nonlinear dynamics modeling. IEEE Trans Vehicle Technol, 2008, 57(3):1425
[23]
Thiele G, Bayer E. Voltage double/tripler current-mode charge pump topology with simple "gear box". PESC 2007 IEEE, Orlando, USA, June 2007:2348
[24]
Bill R, David P K, Calbert L P. Method and apparatus for a charge pump DC-to-DC converter having parallel operating modes. United States Patent, US7808220B2, 2010
Fig. 1.  Simplified structure of current mode charge pump.

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Fig. 2.  Tri-mode charge pump.

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Fig. 3.  States transition diagram of conventional structure.

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Fig. 4.  States transition diagram of proposed structure.

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Fig. 5.  Start-up circuit of the proposed current mode charge pump.

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Fig. 6.  Error amplifier. (a) Conventional. (b) Proposed.

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Fig. 7.  Simulation results of the conventional structure and the proposed one. (a) Conventional with VIN =2:9 V, ILOAD =200 mA. (b) Conventional with VIN= 4:2 V. ILOAD=200 mA. (c) Proposed structure with VIN =2:9 V, ILOAD= 200 mA. (d) Proposed structure with VIN = 4:2 V, ILOAD= 200 mA.

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Fig. 8.  Simulation results of macro model simulator. (a) VIN =2:9 V macro model simulation result, inrush current and output ripple specific figures. (b) VIN =4:2 V macro model simulation result, inrush current and output ripple specific figures.

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Fig. 9.  Micrograph of the proposed charge pump.

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Fig. 10.  Input inrush current with different input voltages. (a) VIN=2.9 V, (b) VIN=3.6 V, (c) VIN=4.2 V, (d) VIN=4.8 V. (e) VIN=5.2 V. (f) VIN=5.5 V.

DownLoad: Full-Size Img PowerPoint
Fig. 11.  Measurement performances of efficiency and transient response. (a) Efficiency of the proposed structure compared with the conventional. (b) Load transient response.

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Table 1.   Circuit status of each step.

ComponentStep 1Step 2Step 3
S1OpenClosedClosed
S2ClosedOpenClosed
M5OffOnOff
M6On Off Off
M7OnOffOff
M8OffOnOff
DownLoad: CSV

Table 2.   Simulation Conditions.

ParameterValue
VIN 2.9 V/4.2 V
VOUT5 V
IO200 mA
CFLT11 μF
CFLT21 μF
CL10 μF
W/L\rm PM0 300 μm/1 μm
W/L\rm NM010 μm/1 μm
W/L\rm PM130000 μm /1 μm
W/L\rm PM230000 μm /1 μm
W/L\rm PM330000 μm /1 μm
W/L\rm PM430000 μm /1 μm
W/L\rm PM530000 μm /1 μm
W/L\rm PM630000 μm /1 μm
W/L\rm NM115000 μm /1 μm
W/L\rm NM215000 μm /1 μm
W/L\rm NM315000 μm /1 μm
DownLoad: CSV

Table 3.   Summary of the simulation results.

Output voltage (V) Output ripple (mV) Inrush current (A) Output current (mA)
Conventional 4.97 @ VIN=2.9 V
4.97 @ VIN = 4.2 V 		3 @ VIN = 2.9 V
11 @ VIN = 4.2 V 		2.593 @ VIN = 2.9 V
4.271 @ VIN = 4.2 V 		200 @ VIN = 2.9 V
200 @ VIN = 4.2 V
The widely used chip 5.02 @ VIN = 2.9 V
5.04 @ VIN = 4.2 V 		8 @ VIN = 2.9 V
18 @ VIN = 4.2 V 		2.560 @ VIN = 2.9 V
2.520 @ VIN = 4.2 V 		200 @ VIN = 2.9 V
200 @ VIN = 4.2 V
Proposed 4.97 @ VIN = 2.9 V
4.97 @ VIN = 4.2 V 		3 @ Vin = 2.9 V
11 @ Vin = 4.2 V 		0.839 @ VIN = 2.9 V
0.929 @ VIN = 4.2 V 		200 @ VIN = 2.9 V
200 @ VIN = 4.2 V
DownLoad: CSV

Table 4.   Performance comparison between the measurement results.

Item Proposed chip Widely used chip
Flying capacitor (μF) 11
Load capacitor (μF) 10 10
Switching frequency (MHz) 1 1.2
Input voltage range (V) 2.9-5.5 2.9-5.5
Output voltage (V) 5 5
Load current (mA) 200 250
Battery internal resistance (mΩ) 200 200
Inrush current (A) 0.70 @VIN=2.9 V
0.75 @ VIN=3.6 V
0.80 @ VIN=4.2 V
0.85 @ VIN=4.8 V
0.89 @ VIN=5.2 V
0.90 @ VIN=5.5 V 		2.56 @ VIN=2.9 V
2.55 @ VIN=3.6 V
2.52 @ VIN=4.2 V
2.50 @ VIN=4.8 V
2.45 @ VIN=5.2 V
2.33 @ VIN=5.5 V
Startup time (ms) 2.5 1
Load regulation (mV) 15.6 @ Vin=2.9 V
12.0 @ Vin=4.2 V 		23.9 @ VIN=2.9 V
16.2 @ VIN=4.2 V
Maximum efficiency (%) 86 @ 2x mode
88 @ 1.5x mode
96 @ LDO mode 		85 @ 2x mode
85 @ 1.5x mode
92 @ LDO mode
DownLoad: CSV
[1]
Cabrini A, Fantini A, Torelli G. High-efficiency regulator for on-chip charge pump voltage elevators. Electron Lett, 2006, 42(17):972
[2]
Wu C, Chen C. High-efficiency current-regulated charge pump for a white LED driver. IEEE Trans Circuits Syst Ⅱ, 2009, 56(10):763
[3]
Hwu K, Peng T. High-voltage-boosting converter with charge pump capacitor and coupling inductor combined with buck-boost converter. IET Power Electronics, 2014, 7(1):177
[4]
Zheng C, Chowdhury I, Ma D. Low-noise switched-capacitor power converter with adaptive on-chip surge suppression and pre-emptive timing control. IEEE Trans Power Electron, 2013, 28(11):5174
[5]
Sittisak C, Jirawath P. Low swing CMOS current mode charge pump. ICCAS, 2010 Int Conf, Gyeonggi-do, Korea (South), Oct 2010:1383
[6]
Lin R, Shih H. Piezoelectric transformer based current-source charge-pump power-factor-correction electronic ballast. IEEE Trans Power Electron, 2008, 23(3):1391
[7]
Hsieh Z, Huang N, Shiau M, et al. A novel mixed-structure design for high-efficiency charge pump. MIXDES-16th Int Conf, Lodz, Poland, June 2009:210
[8]
Yu W, Hutchens C, Lai J, et al. High efficiency converter with charge pump and coupled inductor for wide input photovoltaic AC module applications. ECCE 2009 IEEE, San Jose, USA, Sept 2009:3895
[9]
Tseng H T, Chen J F. Voltage compensation-type inrush current limiter for reducing power transformer inrush current. IET Electric Power Appl, 2012, 6(2):101
[10]
Wang X, Sun Y, Li T, et al. Active closed-loop gate voltage control method to mitigate metal oxide semiconductor field-effect transistor turn-off voltage overshoot and ring. IET Power Electron, 2013, 6(8):1715
[11]
Tsang C, Foster M, Stone D. Active current ripple cancellation in parallel connected buck converter modules. IET Power Electron, 2013, 6(4):721
[12]
Kuperman A, Aharon I, Malki S, et al. Design of a semiactive battery-ultracapacitor hybrid energy source. IEEE Trans Power Electron, 2013, 28(2):806
[13]
Yu W, Lai J. Ultra high efficiency bidirectional DC-DC converter with multi-frequency pulse width modulation. APEC 2008 Twenty-Third Annual IEEE, Austin, USA, Feb. 2008:1079
[14]
Honggang S, Fei W. A fault detection and protection scheme for three-level DC-DC converters based on monitoring flying capacitor voltage. IEEE Trans Power Electron, 2012, 27(2):685
[15]
Saiz-Vela A, Miribel P, Colomer J. Ripple reduction on skipping-based regulated two-phase voltage doubler charge pump. Electron Lett, 2009, 45(20):1050
[16]
Yuan B, Lai X. On-chip CMOS current-sensing circuit for DC-DC buck convertor. Electron Lett, 2009, 14(2):102
[17]
Mohammad M G, Ahmad M J, AI-Bakheet M B. Switched positive/negative charge pump design using standard CMOS transistors. IET Circuits Devices Systems, 2010, 4(1):57
[18]
Jyoti G, Ankur S, Hemlata V. High speed CMOS charge pump circuit for PLL applications using 90 nm CMOS technology. WICT 2011 World Conf, Mumbai, India, Dec. 2011:346
[19]
Marcos P, Pfitscher L, Lopes L, et al. Voltage multiplier cells applied to non-isolated DC-DC converters. IEEE Trans Power Electron, 2008, 23(2):871
[20]
Nuvoton Corp. 0.6μm CMOS process, accessed Dec. 2012 https://download.nuvoton.com/NuvotonMoss/DownloadService/member/DownloadPages.aspx
[21]
Cheng K W, Divakar B P, Wu H, et al. Battery-management system (BMS) and SOC development for electrical vehicles. IEEE Trans Vehicle Technology, 2011, 60(1):76
[22]
Antoni S, Chang Y. Battery management system based on battery nonlinear dynamics modeling. IEEE Trans Vehicle Technol, 2008, 57(3):1425
[23]
Thiele G, Bayer E. Voltage double/tripler current-mode charge pump topology with simple "gear box". PESC 2007 IEEE, Orlando, USA, June 2007:2348
[24]
Bill R, David P K, Calbert L P. Method and apparatus for a charge pump DC-to-DC converter having parallel operating modes. United States Patent, US7808220B2, 2010

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    Received: 16 September 2015 Revised: 03 November 2015 Online: Published: 01 June 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(6): 065006
      Cong Liu, Xinquan Lai, Hanxiao Du, Yuan Chi. A double-stage start-up structure to limit the inrush current used in current mode charge pump[J]. Journal of Semiconductors, 2016, 37(6): 065006. doi: 10.1088/1674-4926/37/6/065006 C Liu, X Q Lai, H X Du, Y Chi. A double-stage start-up structure to limit the inrush current used in current mode charge pump[J]. J. Semicond., 2016, 37(6): 065006. doi: 10.1088/1674-4926/37/6/065006.Export: BibTex EndNote
      Citation:
      Cong Liu, Xinquan Lai, Hanxiao Du, Yuan Chi. A double-stage start-up structure to limit the inrush current used in current mode charge pump[J]. Journal of Semiconductors, 2016, 37(6): 065006. doi: 10.1088/1674-4926/37/6/065006

      C Liu, X Q Lai, H X Du, Y Chi. A double-stage start-up structure to limit the inrush current used in current mode charge pump[J]. J. Semicond., 2016, 37(6): 065006. doi: 10.1088/1674-4926/37/6/065006.
      Export: BibTex EndNote
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      A double-stage start-up structure to limit the inrush current used in current mode charge pump

      doi: 10.1088/1674-4926/37/6/065006
      • 1.

        Institute of Electronic CAD, Xidian University, Xi'an 710071, China

      • 2.

        Key Laboratory of High-Speed Circuit Design and EMC, Ministry of Education, Xidian University, Xi'an 710071, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61106026).

      Project supported by the National Natural Science Foundation of China No. 61106026

      More Information
      • Corresponding author: Email: liucong4213@163.com
      • Received Date: 2015-09-16
      • Revised Date: 2015-11-03
      • Published Date: 2016-06-01

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