SEMICONDUCTOR MATERIALS

Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

Chen Xiaofeng, Chen Nuofu, Wu Jinliang, Zhang Xiulan, Chai Chunlin and Yu Yude

+ Author Affiliations

PDF

Abstract: A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given.

Key words: chemical etching

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3558 Times PDF downloads: 1088 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 02 March 2009 Online: Published: 01 August 2009

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Chen Xiaofeng, Chen Nuofu, Wu Jinliang, Zhang Xiulan, Chai Chunlin, Yu Yude. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions[J]. Journal of Semiconductors, 2009, 30(8): 083006. doi: 10.1088/1674-4926/30/8/083006 Chen X F, Chen N F, Wu J L, Zhang X L, Chai C L, Yu Y D. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions[J]. J. Semicond., 2009, 30(8): 083006. doi:  10.1088/1674-4926/30/8/083006.Export: BibTex EndNote
      Citation:
      Chen Xiaofeng, Chen Nuofu, Wu Jinliang, Zhang Xiulan, Chai Chunlin, Yu Yude. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions[J]. Journal of Semiconductors, 2009, 30(8): 083006. doi: 10.1088/1674-4926/30/8/083006

      Chen X F, Chen N F, Wu J L, Zhang X L, Chai C L, Yu Y D. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions[J]. J. Semicond., 2009, 30(8): 083006. doi:  10.1088/1674-4926/30/8/083006.
      Export: BibTex EndNote

      Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

      doi: 10.1088/1674-4926/30/8/083006
      • Received Date: 2015-08-18
      • Accepted Date: 2009-03-02
      • Revised Date: 2009-03-02
      • Published Date: 2009-07-31

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return