SEMICONDUCTOR MATERIALS

Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method

Shengnan Zhang, Xiaozheng Lian, Yanchao Ma, Weidan Liu, Yingwu Zhang, Yongkuan Xu and Hongjuan Cheng

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 Corresponding author: Hongjuan Cheng, Email: xiemn08@126.com

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Abstract: β-Ga2O3 is an ultra-wide band-gap semiconductor with promising applications in UV optical detectors, Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-Ga2O3 crystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-Ga2O3 single crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-Ga2O3 crystals were investigated systematically.

Key words: β-Ga2O3 single crystalhigh qualitydopingelectrical propertiesoptical properties



[1]
Kuramata A, Koshi K, Watanabe S, et al. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth. Appl Phys Lett, 2016, 55(12): 1202A2
[2]
Onuma T, Fujioka S, Yamaguchi T, et al. Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals. Appl Phys Lett, 2013, 103(4): 3561
[3]
Galazka Z, Uecker R, Irmscher K, et al. Czochralski growth and characterization of β-Ga2O3 single crystals. Cryst Res Technol, 2010, 45(12): 1229 doi: 10.1002/crat.v45.12
[4]
Higashiwaki M, Murakami H, Kumagai Y, et al. Current status of Ga2O3 power devices. Jpn J Appl Phys, 2016, 55(12): 1202A1 doi: 10.7567/JJAP.55.1202A1
[5]
Suzuki R, Nakagomi S, Kokubun Y, et al. Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing. Appl Phys Lett, 2009, 94(22): A316
[6]
Shimamura K, Villora E G, Domen K, et al. Epitaxial growth of GaN on (100) β-Ga2O3 substrates by metalorganic vapor phase epitaxy. Jpn J Appl Phys, 2005, 44: L7 doi: 10.1143/JJAP.44.L7
[7]
Higashiwaki M, Konishi K, Sasaki K, et al. Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/ Ga2O3 (001) Schottky barrier diodes fabricated on n-Ga2O3 drift layers grown by halide vapor phase epitaxy. Appl Phys Lett, 2016, 108(13): 1759
[8]
Wong M H, Sasaki K, Kuramata A, et al. Field-plated Ga2O3 MOSFETs with a breakdown voltage of over 750 V. IEEE Electron Device Lett, 2015, 37(2): 212
[9]
Galazka Z, Irmscher K, Uecker R, et al. On the bulk β-Ga2O3 single crystals grown by the Czochralski method. J Cryst Growth, 2014, 404(6): 184
[10]
Liu X, Qiu G, Zhao Y, et al. Gallium oxide nanorods by the conversion of gallium oxide hydroxide nanorods. J Alloys Compd, 2007, 439(1): 275
[11]
Filippo E, Tepore M, Baldassarre F, et al. Synthesis of β-Ga2O3 microstructures with efficient photocatalytic activity by annealing of GaSe single crystal. Appl Surf Sci, 2015, 338: 69 doi: 10.1016/j.apsusc.2015.02.105
[12]
Onuma T, Fujiok S. Polarized Raman spectra in β-Ga2O3 single crystals. J Cryst Growth, 2014, 401: 330 doi: 10.1016/j.jcrysgro.2013.12.061
[13]
Zhang Z, Farzana E, Arehart A, et al. Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy. Appl Phys Lett, 2016, 108(7): 052105
[14]
Víllora E, Shimamura K, Yoshikawa Y, et al. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping. Appl Phys Lett, 2008, 92(20): A316
[15]
Wang X, Zhang F, Saito K, et al. Electrical properties and emission mechanisms of Zn-doped β-Ga2O3 films. J Phys Chem Solids, 2014, 75(11): 1201 doi: 10.1016/j.jpcs.2014.06.005
[16]
Harwig T, Kellendonk F, and Slappendel S. The ultraviolet luminescence of β-galliumsesquioxide. J Phys Chem Solids, 1978, 39(6): 675 doi: 10.1016/0022-3697(78)90183-X
[17]
Takakura K, Koga D, Ohyama H, et al. Evaluation of the crystalline quality of β-Ga2O3, films by optical absorption measurements. Physica B, 2009, 404(23/24): 4854
[18]
Zhang Y J, Yan J L, Zhao G, et al. First principles calculation and experimental research of Si-doped β-Ga2O3. Acta Phys Sin, 2011, 60(3): 037103
Fig. 1.  (Color online) The appearance of as-grown β-Ga2O3 single crystals. Sample 1 represents unintentionally doped β-Ga2O3 crystal and Sample 2 to Sample 4 represent Si-doped β-Ga2O3 single crystals with an increasing Si content.

Fig. 2.  (Color online) (a) β-Ga2O3 wafer after polishing. (b) Polished β-Ga2O3 crystal samples cut from the bulk crystal.

Fig. 3.  (Color online) The two-dimension surface morphologies of all the samples.

Fig. 4.  Rocking curve of the polished unintentionally doped β-Ga2O3 crystal sample.

Fig. 5.  (Color online) Raman spectra of EFG grown unintentionally doped and Si-doped β-Ga2O3 crystal.

Fig. 6.  (Color online) Transmittance spectra of EFG grown unintentionally doped and Si-doped β-Ga2O3 crystal.

Table 1.   The number of samples and the corresponding doping content of SiO2 power.

Number of samples Doping content of SiO2
power/100 g Ga2O3 power (mg)
Sample 1 0
Sample 2 0.5
Sample 3 4.0
Sample 4 15.0
DownLoad: CSV

Table 2.   The Hall test results of EFG grown unintentionally doped and Si-doped β-Ga2O3 crystal.

Sample Resistivity (Ω·cm) Mobility (cm2/(V·s)) Carrier concentration (cm−3) Conductive type
Sample 1 1.10 109 5.22 × 1016 N
Sample 2 0.259 123 2.55 × 1017 N
Sample 3 0.042 96 1.71 × 1018 N
Sample 4 0.013 90 6.12 × 1018 N
DownLoad: CSV
[1]
Kuramata A, Koshi K, Watanabe S, et al. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth. Appl Phys Lett, 2016, 55(12): 1202A2
[2]
Onuma T, Fujioka S, Yamaguchi T, et al. Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals. Appl Phys Lett, 2013, 103(4): 3561
[3]
Galazka Z, Uecker R, Irmscher K, et al. Czochralski growth and characterization of β-Ga2O3 single crystals. Cryst Res Technol, 2010, 45(12): 1229 doi: 10.1002/crat.v45.12
[4]
Higashiwaki M, Murakami H, Kumagai Y, et al. Current status of Ga2O3 power devices. Jpn J Appl Phys, 2016, 55(12): 1202A1 doi: 10.7567/JJAP.55.1202A1
[5]
Suzuki R, Nakagomi S, Kokubun Y, et al. Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing. Appl Phys Lett, 2009, 94(22): A316
[6]
Shimamura K, Villora E G, Domen K, et al. Epitaxial growth of GaN on (100) β-Ga2O3 substrates by metalorganic vapor phase epitaxy. Jpn J Appl Phys, 2005, 44: L7 doi: 10.1143/JJAP.44.L7
[7]
Higashiwaki M, Konishi K, Sasaki K, et al. Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/ Ga2O3 (001) Schottky barrier diodes fabricated on n-Ga2O3 drift layers grown by halide vapor phase epitaxy. Appl Phys Lett, 2016, 108(13): 1759
[8]
Wong M H, Sasaki K, Kuramata A, et al. Field-plated Ga2O3 MOSFETs with a breakdown voltage of over 750 V. IEEE Electron Device Lett, 2015, 37(2): 212
[9]
Galazka Z, Irmscher K, Uecker R, et al. On the bulk β-Ga2O3 single crystals grown by the Czochralski method. J Cryst Growth, 2014, 404(6): 184
[10]
Liu X, Qiu G, Zhao Y, et al. Gallium oxide nanorods by the conversion of gallium oxide hydroxide nanorods. J Alloys Compd, 2007, 439(1): 275
[11]
Filippo E, Tepore M, Baldassarre F, et al. Synthesis of β-Ga2O3 microstructures with efficient photocatalytic activity by annealing of GaSe single crystal. Appl Surf Sci, 2015, 338: 69 doi: 10.1016/j.apsusc.2015.02.105
[12]
Onuma T, Fujiok S. Polarized Raman spectra in β-Ga2O3 single crystals. J Cryst Growth, 2014, 401: 330 doi: 10.1016/j.jcrysgro.2013.12.061
[13]
Zhang Z, Farzana E, Arehart A, et al. Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy. Appl Phys Lett, 2016, 108(7): 052105
[14]
Víllora E, Shimamura K, Yoshikawa Y, et al. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping. Appl Phys Lett, 2008, 92(20): A316
[15]
Wang X, Zhang F, Saito K, et al. Electrical properties and emission mechanisms of Zn-doped β-Ga2O3 films. J Phys Chem Solids, 2014, 75(11): 1201 doi: 10.1016/j.jpcs.2014.06.005
[16]
Harwig T, Kellendonk F, and Slappendel S. The ultraviolet luminescence of β-galliumsesquioxide. J Phys Chem Solids, 1978, 39(6): 675 doi: 10.1016/0022-3697(78)90183-X
[17]
Takakura K, Koga D, Ohyama H, et al. Evaluation of the crystalline quality of β-Ga2O3, films by optical absorption measurements. Physica B, 2009, 404(23/24): 4854
[18]
Zhang Y J, Yan J L, Zhao G, et al. First principles calculation and experimental research of Si-doped β-Ga2O3. Acta Phys Sin, 2011, 60(3): 037103
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    Received: 01 December 2017 Revised: 28 February 2018 Online: Uncorrected proof: 20 April 2018Accepted Manuscript: 26 April 2018Published: 09 August 2018

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      Shengnan Zhang, Xiaozheng Lian, Yanchao Ma, Weidan Liu, Yingwu Zhang, Yongkuan Xu, Hongjuan Cheng. Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method[J]. Journal of Semiconductors, 2018, 39(8): 083003. doi: 10.1088/1674-4926/39/8/083003 S N Zhang, X Z Lian, Y C Ma, W D Liu, Y W Zhang, Y K Xu, H J Cheng, Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method[J]. J. Semicond., 2018, 39(8): 083003. doi: 10.1088/1674-4926/39/8/083003.Export: BibTex EndNote
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      Shengnan Zhang, Xiaozheng Lian, Yanchao Ma, Weidan Liu, Yingwu Zhang, Yongkuan Xu, Hongjuan Cheng. Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method[J]. Journal of Semiconductors, 2018, 39(8): 083003. doi: 10.1088/1674-4926/39/8/083003

      S N Zhang, X Z Lian, Y C Ma, W D Liu, Y W Zhang, Y K Xu, H J Cheng, Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method[J]. J. Semicond., 2018, 39(8): 083003. doi: 10.1088/1674-4926/39/8/083003.
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      Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method

      doi: 10.1088/1674-4926/39/8/083003
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      • Corresponding author: Email: xiemn08@126.com
      • Received Date: 2017-12-01
      • Revised Date: 2018-02-28
      • Published Date: 2018-08-01

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