Chin. J. Semicond. > 2001, Volume 22 > Issue 1 > 35-39
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使用 X射线衍射技术判定 Si C单晶体的结构和极性(英文)

郑新和 , 渠波 , 王玉田 , 杨辉 and 梁骏吾

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Key words: SiC单晶, 极性, 6H结构, 散射因子

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(1): 35-39
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      • Received Date: 2015-08-19

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