| Citation: |
Jiang Huaping, Chen Wanjun, Liu Chuang, Rao Zugang, Dong Bin, Zhang Bo. Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs[J]. Journal of Semiconductors, 2011, 32(12): 124004. doi: 10.1088/1674-4926/32/12/124004
Jiang H P, Chen W J, Liu C, Rao Z G, Dong B, Zhang B. Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs[J]. J. Semicond., 2011, 32(12): 124004. doi: 10.1088/1674-4926/32/12/124004.
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Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs
doi: 10.1088/1674-4926/32/12/124004
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Abstract
A linearly graded-doping junction termination extension (LG-JTE) for 3.3-kV-class insulated gate bipolar transistors (IGBTs) was proposed and experimentally investigated. Unlike conventional multi-implantation utilizing more than one photolithography step, a single mask with injection window widths varied linearly away from the main junction to the edge was implemented in this proposed structure. Based on the simulation results, IGBTs with LG-JTE structures were successfully fabricated on the domestic process platform. The fabricated devices exhibited a 3.7 kV forward-blocking voltage, which is close to the theoretical value of an ideal parallel plane case. This is the first success in fabrication 3.3 kV-class IGBT in a domestic application.-
Keywords:
- high voltage IGBT
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] -
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