Fig. 1.
XRD patterns of 0, 3, 6, 9 at.% In-doped ZnS film
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Jinhuo Chen, Wenjian Li. Significant improvement of ZnS film electrical and optical performance by indium incorporation[J]. Journal of Semiconductors, 2014, 35(9): 093003. doi: 10.1088/1674-4926/35/9/093003
J H Chen, W J Li. Significant improvement of ZnS film electrical and optical performance by indium incorporation[J]. J. Semicond., 2014, 35(9): 093003. doi: 10.1088/1674-4926/35/9/093003.
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Significant improvement of ZnS film electrical and optical performance by indium incorporation
doi: 10.1088/1674-4926/35/9/093003
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Abstract
This paper reports a new material, indium-doped ZnS (ZnS:In) film, which is fabricated for the first time to improve its electrical and optical performance. By electron beam evaporation technology and the optimized annealing treatment, high quality ZnS:In film is prepared. XRD indicates that the incorporation of 6 at.% indium atoms into ZnS film causes little lattice deformation. The AFM results imply that large sized particles are compactly dispersed in the ZnS:In layer and results in an unsmooth surface. Electrical and optical property tests show that the resistivity of ZnS film is greatly decreased to 4.46×10-2 Ω·cm and the optical transmittance is improved to 85% in the visible region. Comparing with the results in other literatures, significant progress in electrical/optical performance has been made in this paper.-
Keywords:
- ZnS,
- indium incorporation,
- thin film,
- semiconductors
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References
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