SPECIAL TOPIC ON 2D MATERIALS AND DEVICES

Recent progress in synthesis of two-dimensional hexagonal boron nitride

Haolin Wang1, 2, Yajuan Zhao3, Yong Xie1, Xiaohua Ma1 and Xingwang Zhang2,

+ Author Affiliations

 Corresponding author: Xingwang Zhang,Email:xwzhang@semi.ac.cn

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Abstract: Two-dimensional (2D) materials have recently received a great deal of attention due to their unique structures and fascinating properties, as well as their potential applications. 2D hexagonal boron nitride (2D h-BN), an insulator with excellent thermal stability, chemical inertness, and unique electronic and optical properties, and a band gap of 5.97 eV, is considered to be an ideal candidate for integration with other 2D materials. Nevertheless, the controllable growth of high-quality 2D h-BN is still a great challenge. A comprehensive overview of the progress that has been made in the synthesis of 2D h-BN is presented, highlighting the advantages and disadvantages of various synthesis approaches. In addition, the electronic, optical, thermal, and mechanical properties, heterostructures, and related applications of 2D h-BN are discussed.

Key words: hexagonal boron nitridetwo-dimensional materialsapplicationssynthesis



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Fig. 1.  Carrier mobility of exfoliated monolayer graphene supported on several typical substrates at low temperatures (1.7-20 K) [5].

Fig. 2.  (Color online) (a) Schematic illustration of the epitaxial graphene growth on h-BN. (b) Zoomed-in AFM image of as-grown graphene domains on h-BN [13]. (c) Schematic of the MoS2/h-BN/p-GaN MIS heterojunction structure. (d) I-V curves for the MIS diode [22]. (e) Schematic of the BP/h-BN/MoS2 sandwich FGFET device structure. (f) Optical micrograph of a typical fabricated device. The dotted lines indicate the boundary of each material [23].

Fig. 3.  (Color online) Optical micrographs showing (a) the microbridge device and (b) an 11-layer h-BN sample suspended on the device used for thermal measurement. (c) Measured thermal conductance values of four h-BN samples [33].

Fig. 4.  (Color online) h-BN thin films as high-performance oxidation-resistance coatings. (a, b) SEM images of Cu foils after oxidization with and without h-BN coatings at 500 ℃ for 30 min. (c, d) SEM images of stainless steel surface with and without h-BN coatings at up to 1100 ℃ for 30 min. With h-BN coating, both Cu and stainless steel can maintain their original color. Without h-BN coatings, their colors have changed because of oxidation [42]. (e) Friction force signal taken on the bare Cu surface and h-BN monolayer coating on Cu at an applied load of 40 nN. (f) The deduced friction force as a function of the applied load [43].

Fig. 5.  SEM images and corresponding diagrams illustrating two observed exfoliating mechanisms under the shear force created by milling balls: (a), (c) cleavage from the edge of an h-BN particle; (b), (d) thin sheets peeling off the top surface of an h-BN particle [53].

Fig. 6.  (Color online) (a) Illustration of the exfoliation mechanism. (b) Typical curved nanosheets several hundred nanometers in size (circled in black). (c) A very flat nanosheet [60].

Fig. 7.  (Color online) Schematic diagrams of (a) the low pressure CVD system used for h-BN growth [69] and (b) h-BN growth mechanism on Cu propose by Kidambi et al. [70].

Fig. 8.  h-BN crystals grown at different conditions. (a) APCVD experimental setup for h-BN growth. (b) SEM images of the h-BN domains grown at 1065 ℃ using argon as a buffer gas [92].

Fig. 9.  (Color online) (a) SEM images of BN islands on Cu foil and (b) real-space atomic model of four equivalent orientations of triangular BN crystallites on Cu(100) [95]. SEM images of the as-grown oriented (c) triangular, (d) asymmetric hexagonal and (e) hexagonal shaped h-BN domains, respectively. The red and yellow lines outline the h-BN domains which indicate 60° rotational difference from each other. (f) Schematic of the atomic arrangement of h-BN on Cu (110) with two different possible orientations [97].

Fig. 10.  Epitaxial growth of 2D h-BN. Friction force images of h-BN domains grown on (a) Ge (110) and (b) Ge (100), respectively [98].

Fig. 11.  SEM images of (a) triangular and (b) hexagonal-shape h-BN domains grown on unpolished and polished Cu, respectively. The inset in each figure shows higher magnification [100]. SEM image of triangular-shaped h-BN domains (c) grown on Cu foil surface without pre-annealing (d) grown on annealed Cu surface for 6 h [101]. (e) Typical SEM images of h-BN grains grown on Cu-Ni alloy foils with 15 atom % Ni. (f) The molecular dynamic simulation of H2BNH2 dissociation on the surface of different substrates [102]. (g) Schematic of catalyst system composed of Fe/SiO2/Si. (h) SEM image of a large, tooth-edged h-BN domain grown on Fe(1000 nm)/SiO2(300 nm)/Si substrates. Inset: corresponding low magnification SEM image [103].

Fig. 12.  2D h-BN synthesized using catalysis-free approaches. (a) SEM images of the BN sheets grown on silicon substrates. High magnification TEM images showing the edges of the BN sheets consisting of 1-2 (b), 1-3 (c) atomic layers, respectively [105]. (d) Schematic diagram (top) and photograph (bottom) of direct grown NCBN films on SiO2/Si substrates. (e) Cross-section TEM image taken at a folded edge showing 7 NCBN layers [106].

Fig. 13.  (a) Schematic of the growth method for a h-BN film by annealing a Co (Ni)/amorphous BN/SiO2 structure in vacuum [108]. (b) Schematic of h-BN synthesis by the vacuum annealing of sandwiched substrates Fe/(B, N)/Ni. (c) High resolution TEM image of a h-BN film edge [110]. (d) Schematic illustration of the self-limiting reaction process of molten B2O3 and gaseous NH3 for h-BN film synthesis and the transference of the h-BN film [112].

Fig. 14.  (Color online) Synthesis of 2D h-BN using IBSD. (a) Schematic diagram of the IBSD process. (b) AFM images of h-BN domains grown on Cu foils transferred onto a SiO2/Si substrate [113]. (c) Schematic drawing of the dependence of h-BN domain size on the ion beam density and the growth temperature, from which three regimes can be identified, as indicated by the red dashed lines. (d) SEM images of the h-BN domains prepared on the Ni foils [32].

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    Received: 28 October 2016 Revised: 25 November 2016 Online: Published: 01 March 2017

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      Haolin Wang, Yajuan Zhao, Yong Xie, Xiaohua Ma, Xingwang Zhang. Recent progress in synthesis of two-dimensional hexagonal boron nitride[J]. Journal of Semiconductors, 2017, 38(3): 031003. doi: 10.1088/1674-4926/38/3/031003 H L Wang, Y J Zhao, Y Xie, X H Ma, X W Zhang. Recent progress in synthesis of two-dimensional hexagonal boron nitride[J]. J. Semicond., 2017, 38(3): 031003. doi: 10.1088/1674-4926/38/3/031003.Export: BibTex EndNote
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      Haolin Wang, Yajuan Zhao, Yong Xie, Xiaohua Ma, Xingwang Zhang. Recent progress in synthesis of two-dimensional hexagonal boron nitride[J]. Journal of Semiconductors, 2017, 38(3): 031003. doi: 10.1088/1674-4926/38/3/031003

      H L Wang, Y J Zhao, Y Xie, X H Ma, X W Zhang. Recent progress in synthesis of two-dimensional hexagonal boron nitride[J]. J. Semicond., 2017, 38(3): 031003. doi: 10.1088/1674-4926/38/3/031003.
      Export: BibTex EndNote

      Recent progress in synthesis of two-dimensional hexagonal boron nitride

      doi: 10.1088/1674-4926/38/3/031003
      Funds:

      Project supported by the National Natural Science Foundation of China Nos.61376007,61674137

      Project supported by the National Natural Science Foundation of China (Nos.61376007,61674137) and the National Key Research and Development Program of China (No.2016YFB0400802)

      and the National Key Research and Development Program of China No.2016YFB0400802

      More Information
      • Corresponding author: Xingwang Zhang,Email:xwzhang@semi.ac.cn
      • Received Date: 2016-10-28
      • Revised Date: 2016-11-25
      • Published Date: 2017-03-01

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