| Citation: |
Li Junhong, Wang Chenghao, Huang Xin, Xu Lian. Fabrication of Silicon-Based PZT Films Compatible with MEMS[J]. Journal of Semiconductors, 2006, In Press.
Li J H, Wang C H, Huang X, Xu L. Fabrication of Silicon-Based PZT Films Compatible with MEMS[J]. Chin. J. Semicond., 2006, 27(10): 1776.
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Fabrication of Silicon-Based PZT Films Compatible with MEMS
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Abstract
Silicon based PZT films are prepared by the sol-gel process. The electrodes are shaped with the lift-off technique and annealing. The PZT films are patterned by chemical etching before crystallization annealing.The electrodes and PZT films are analyzed by SEM,EDX,and XRD.The results show that the films are in the perovskite phase. The patterning process improves conditions of photolithography and etching,enhances qualities of figures of electrodes and PZT films without reducing their performance.The patterning technology of electrodes and PZT films does not require a long chemical etching process and improves the compatibility of fabrication of PZT films with MEMS.-
Keywords:
- PZT films,
- sol-gel process,
- compatibility,
- pattern
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References
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Proportional views
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