| Citation: |
Su Shubing, Liu Xinyu, Xu Anhuai, Yu Jinyong, Qi Ming, Liu Xunchun, Wang Runmei. Performance of an InP DHBT Grown by MBE[J]. Journal of Semiconductors, 2006, In Press.
Su S B, Liu X Y, Xu A H, Yu J Y, Qi M, Liu X C, Wang R M. Performance of an InP DHBT Grown by MBE[J]. Chin. J. Semicond., 2006, 27(5): 792.
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Performance of an InP DHBT Grown by MBE
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Abstract
We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor (DHBT) produced in China.The device has a 2μm×12μm U-shaped emitter area and demonstrates a peak common-emitter DC current gain of over 300,an offset voltage of 0.16V,a knee voltage of 0.6V,and an open-base breakdown voltage of about 6V.The HBT exhibits good microwave performance with a current gain cutoff frequency of 80GHz and a maximum oscillation frequency of 40GHz.These results indicate that this InP/InGaAs DHBT is suitable for low-voltage,low-power,and high-frequency applications. -
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