SEMICONDUCTOR DEVICES

Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz

Zhiming Wang1, , Xin Lü1, Xiaobin Luo1, Yuxing Cui2, Xiguo Sun2, Jianghui Mo2, Xingchang Fu2, Liang Li2 and Dawei He2

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 Corresponding author: Zhiming Wang, E-mail: wangzhiming872@163.com

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Abstract: 90-nm T-shaped gate InP-based In0.52Al0.48As/In0.6Ga0.4As pseudomorphic high electron mobility transistors were designed and fabricated with a gate-width of 2 × 30 μm, a source—drain space of 2.5 μm, and a source—gate space of 0.75 μm. DC, RF and small-signal model characterizations were demonstrated. The maximum saturation current density was measured to be 755 mA/mm biased at Vgs = 0.6 V and Vds = 1.5 V. The maximum extrinsic transconductance was measured to be 1006 mS/mm biased at Vgs = -0.1 V and Vds = 1.5 V. The extrapolated current gain cutoff frequency and maximum oscillation frequency based on S-parameters measured from 0.5 to 110 GHz were 180 and 264 GHz, respectively. The inflection point (the stability factor k= 1) where the slope from —10 dB/decade (MSG) to —20 dB/decade (MAG) was measured to be 83 GHz. The small-signal model of this device was also established, and the S-parameters of the model are consistent with those measured from 0.5—110 GHz.

Key words: InPPHEMTsInAlAs/InGaAsMMICssmall-signal modeling



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Fig. 1.  Effective energy-gap $E_{\rm G, eff}$ as a function of channel thickness. The inset shows the schematic energy-band diagram.

Fig. 2.  The schematic cross-section of InP-based PHEMT.

Fig. 3.  The SEM photograph of 90nm T-gate.

Fig. 4.  A photograph of the device.

Fig. 5.  DC characteristics of the device.

Fig. 6.  $I_{\rm ds}$ and $g_{\rm m}$ versus $V_{\rm gs}$.

Fig. 7.  $H_{21}$, MAG/MSG, $S_{21}$ and stability factor $k$ versus frequency.

Fig. 8.  Small signal equivalent circuit model of this PHEMT.

Fig. 9.  (Color online) The $S$-parameters fitting curves.

Table 1.   InP-based PHEMTs epitaxial structure.

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Table 2.   Comparison with published InP HEMTs with gate-length between 88 to 120 nm.

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Table 3.   Small signal equivalent circuit model parameters.

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    Received: 30 July 2014 Revised: Online: Published: 01 February 2015

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      Zhiming Wang, Xin Lü, Xiaobin Luo, Yuxing Cui, Xiguo Sun, Jianghui Mo, Xingchang Fu, Liang Li, Dawei He. Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz[J]. Journal of Semiconductors, 2015, 36(2): 024005. doi: 10.1088/1674-4926/36/2/024005 Z M Wang, X Lü, X B Luo, Y X Cui, X G Sun, J H Mo, X C Fu, L Li, D W He. Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz[J]. J. Semicond., 2015, 36(2): 024005. doi: 10.1088/1674-4926/36/2/024005.Export: BibTex EndNote
      Citation:
      Zhiming Wang, Xin Lü, Xiaobin Luo, Yuxing Cui, Xiguo Sun, Jianghui Mo, Xingchang Fu, Liang Li, Dawei He. Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz[J]. Journal of Semiconductors, 2015, 36(2): 024005. doi: 10.1088/1674-4926/36/2/024005

      Z M Wang, X Lü, X B Luo, Y X Cui, X G Sun, J H Mo, X C Fu, L Li, D W He. Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz[J]. J. Semicond., 2015, 36(2): 024005. doi: 10.1088/1674-4926/36/2/024005.
      Export: BibTex EndNote

      Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz

      doi: 10.1088/1674-4926/36/2/024005
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      Project supported by the National Natural Science Foundation of China (No. 61275107).

      More Information
      • Corresponding author: E-mail: wangzhiming872@163.com
      • Received Date: 2014-07-30
      • Accepted Date: 2014-10-08
      • Published Date: 2015-01-25

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