| Citation: |
Cheng Wei, Jin Zhi, Liu Xinyu, Yu Jinyong, Xu Anhuai, Qi Ming. Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz[J]. Journal of Semiconductors, 2008, In Press.
Cheng W, Jin Z, Liu X Y, Yu J Y, Xu A H, Qi M. Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz[J]. J. Semicond., 2008, 29(3): 414.
Export: BibTex EndNote
|
Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz
-
Abstract
Polyimide passivation and planarization process techniques for high speed InP/InGaAs single heterojunction bipolar transistors (SHBTS) are developed.A maximum extrapolated ft of 210GHz is achieved for the SHBT with 1.4μm×15μm emitter area at VCE=1.1V and IC=335mA.This device is suitable for high speed and low power applications,such as ultra high speed mixed signal circuits and optoelectronic communication ICs.-
Keywords:
- InP,
- HBT,
- polyimide,
- planarization
-
References
-
Proportional views
DownLoad: