J. Semicond. > 2014, Volume 35 > Issue 12 > 126002, doi: 10.1088/1674-4926/35/12/126002
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SEMICONDUCTOR TECHNOLOGY

A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography

Mingyan Yu1, 2, , Shirui Zhao2, Yupeng Jing2, Yunbo Shi1 and Baoqin Chen2

+ Author Affiliations

 Corresponding author: Yu Mingyan, Email:yumingyan@ime.ac.cn

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Abstract: Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1 solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate, such as high density biochips, flexible electronics and liquid crystal display screens.

Key words: charging effect, pattern distortions, electron beam lithography



[1]
Duan H, Winston D, Yang J K W, et al. Sub-10-nm half-pitch electron-beam lithography by using poly (methyl methacrylate) as a negative resist. J Vac Sci Technol B, 2010, 28(6):C6C58 doi: 10.1116/1.3501353
[2]
Grigorescu A E, Hagen C W. Resists for sub-20-nm electron beam lithography with a focus on HSQ:state of the art. Nanotechnology, 2009, 20(29):292001 doi: 10.1088/0957-4484/20/29/292001
[3]
Cord B, Yang J, Duan H, et al. Limiting factors in sub-10 nm scanning-electron-beam lithography. J Vac Sci Technol B, 2009, 27:2616 doi: 10.1116/1.3253603
[4]
Ma S, Con C, Yavuz M, et al. Polystyrene negative resist for high-resolution electron beam lithography. Nanoscale Research Letters, 2011, 6(1):1 doi: 10.1186/1556-276X-6-446
[5]
Ren Liming, Wang Wenping, Chen Baoqin, et al. Microfabrication of nano-scale feature lines. Journal of Semiconductors, 2004, 25(12):1722 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?flag=1&file_no=08032601&journal_id=bdtxbcn
[6]
Xie C Q, Zhu X L, Li H L, et al. Fabrication of X-ray diffractive optical elements for laser fusion applications. Opt Eng, 2013, 52(3):033402 doi: 10.1117/1.OE.52.3.033402
[7]
Wilson G, Evans A, Dennison J R. Electron energy dependent charging effects of multilayered dielectric materials. Bulletin of the American Physical Society, 2011:56 http://adsabs.harvard.edu/abs/2013ITPS...41.3536W
[8]
Murakawa S, McVittie J P. Mechanism of surface charging effects on etching profile defects. Jpn J Appl Phys, 1994, 33(part 1):2184 doi: 10.1143/JJAP.33.2184
[9]
Fakhfakh S, Jbara O, Fakhfakh Z. Charge transport and behavior analysis with electron irradiated (PMMA). IEEE Conference on Electrical Insulation and Dielectric Phenomena, 2009:441
[10]
Joo J, Chow B Y, Jacobson J M. Nanoscale patterning on insulating substrates by critical energy electron beam lithography. Nano Lett, 2006, 6(9):2021 doi: 10.1021/nl061211q
[11]
Satyalakshmi K M, Olkhovets A, Metzler M G, et al. Charge induced pattern distortion in low energy electron beam lithography. J Vac Sci Technol B, 2000, 18(6):3122 doi: 10.1116/1.1321755
[12]
Liu J, Li Q, Ren M, et al. Graphene as discharge layer for electron beam lithography on insulating substrate. Appl Phys Lett, 2013, 103(113107):1 http://adsabs.harvard.edu/abs/2013ApPhL.103k3107L
[13]
Bailey T C, Resnick D J, Mancini D, et al. Template fabrication schemes for step and flash imprint lithography. Microelectron Eng, 2002, 61/62:461 doi: 10.1016/S0167-9317(02)00462-8
[14]
Dylewicz R, Lis S, De La Rue R M, et al. Charge dissipation layer based on conductive polymer for electron-beam patterning of bulk zinc oxide. Electron Lett, 2010, 46(14):1025 doi: 10.1049/el.2010.1282
[15]
Muhammad M, Buswell S C, Dew S K, et al. Nanopatterning of PMMA on insulating surfaces with various anti-charging, schemes using 30 keV electron beam lithography. J Vac Sci Technol B, 2011, 29(06F304):1
[16]
Wang Ying, Han Weihua, Yang Xiang, et al. An efficient dose-compensation method for proximity effect correction. Journal of Semiconductors, 2010, 31(8):086001 doi: 10.1088/1674-4926/31/8/086001
[17]
Satyalakshmi K M, Olkhovets A, Metzler M G, et al. Charge induced pattern distortion in low energy electron beam lithography. J Vac Sci Technol B, 2000, 18(6):3122 doi: 10.1116/1.1321755
Fig. 1.  Discharge phenomenon and lines distortion of photoresist caused by the charging effect in high energy electron beam lithography on insulating substrate

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Fig. 2.  Schematic process flow diagram of insulating substrate 1# coated with charge dissipating metal layer and PMMA resist

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Fig. 3.  Schematic process flow diagram of insulating substrate 2# coated with a metal layer, PMMA resist and conductive polymer layer

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Fig. 4.  Schematic process flow diagram of insulating substrate 3# coated with PMMA resist and conductive polymer layer

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Fig. 5.  Distortion of main field exposure caused by the charging effect on an insulating substrate, where the stitching error reaches several microns. (a) The test pattern for the experiment, which includes a line group with a different width and rectangle area with different dimensions. (b) Part of an enlarged view of the distortions of exposure of the main fields and lines. (c) Part of an enlarged view of the distortion of a line with a 1 $\mu $m width; the line is divided into four lines. (d) Distortion of a rectangular pattern of 14 $\times$ 12 $\mu$m$^{2}$. (e) Part of an enlarged view of (d)

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Fig. 6.  Schematic of the exposure main field and the distortion of test pattern. (a) The division of the exposure main field. (b) Part of an enlarged view of each main field. (c) Distortion of a line with 1 $\mu $m width. (d), (e) Schematics of the test pattern in Fig. 5(c).

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Fig. 7.  Simulation analysis of the quantity of accumulated charge with different accelerating voltages.

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Fig. 8.  Example of distortion and stitching error of main field exposure caused by the charging effect on insulating substrate. (a) Exposure result of insulating substrate 1# without conductive resist. (b), (c), (d) Part of an enlarged SEM view of (a). (e) Exposure result of insulating substrate 2# with a thin layer conductive resist. The immersed time of the conductive resist in DI water is 1 min.

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Fig. 9.  Exposure result of substrate 2# with a thick layer of conductive resist after being immersed in DI water for 10 min

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Fig. 10.  (a) Exposure result of substrate 3# with a thick layer of conductive resist above the PMMA directly. (b), (c), (f) Part of the enlarged view of (a), where the designed width of the line group from left to right is 1--10 nm respectively in (b). (d), (e) Enlarged views of (c) and (f) respectively, where the designed line width is 1 $\mu $m in (d)

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[1]
Duan H, Winston D, Yang J K W, et al. Sub-10-nm half-pitch electron-beam lithography by using poly (methyl methacrylate) as a negative resist. J Vac Sci Technol B, 2010, 28(6):C6C58 doi: 10.1116/1.3501353
[2]
Grigorescu A E, Hagen C W. Resists for sub-20-nm electron beam lithography with a focus on HSQ:state of the art. Nanotechnology, 2009, 20(29):292001 doi: 10.1088/0957-4484/20/29/292001
[3]
Cord B, Yang J, Duan H, et al. Limiting factors in sub-10 nm scanning-electron-beam lithography. J Vac Sci Technol B, 2009, 27:2616 doi: 10.1116/1.3253603
[4]
Ma S, Con C, Yavuz M, et al. Polystyrene negative resist for high-resolution electron beam lithography. Nanoscale Research Letters, 2011, 6(1):1 doi: 10.1186/1556-276X-6-446
[5]
Ren Liming, Wang Wenping, Chen Baoqin, et al. Microfabrication of nano-scale feature lines. Journal of Semiconductors, 2004, 25(12):1722 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?flag=1&file_no=08032601&journal_id=bdtxbcn
[6]
Xie C Q, Zhu X L, Li H L, et al. Fabrication of X-ray diffractive optical elements for laser fusion applications. Opt Eng, 2013, 52(3):033402 doi: 10.1117/1.OE.52.3.033402
[7]
Wilson G, Evans A, Dennison J R. Electron energy dependent charging effects of multilayered dielectric materials. Bulletin of the American Physical Society, 2011:56 http://adsabs.harvard.edu/abs/2013ITPS...41.3536W
[8]
Murakawa S, McVittie J P. Mechanism of surface charging effects on etching profile defects. Jpn J Appl Phys, 1994, 33(part 1):2184 doi: 10.1143/JJAP.33.2184
[9]
Fakhfakh S, Jbara O, Fakhfakh Z. Charge transport and behavior analysis with electron irradiated (PMMA). IEEE Conference on Electrical Insulation and Dielectric Phenomena, 2009:441
[10]
Joo J, Chow B Y, Jacobson J M. Nanoscale patterning on insulating substrates by critical energy electron beam lithography. Nano Lett, 2006, 6(9):2021 doi: 10.1021/nl061211q
[11]
Satyalakshmi K M, Olkhovets A, Metzler M G, et al. Charge induced pattern distortion in low energy electron beam lithography. J Vac Sci Technol B, 2000, 18(6):3122 doi: 10.1116/1.1321755
[12]
Liu J, Li Q, Ren M, et al. Graphene as discharge layer for electron beam lithography on insulating substrate. Appl Phys Lett, 2013, 103(113107):1 http://adsabs.harvard.edu/abs/2013ApPhL.103k3107L
[13]
Bailey T C, Resnick D J, Mancini D, et al. Template fabrication schemes for step and flash imprint lithography. Microelectron Eng, 2002, 61/62:461 doi: 10.1016/S0167-9317(02)00462-8
[14]
Dylewicz R, Lis S, De La Rue R M, et al. Charge dissipation layer based on conductive polymer for electron-beam patterning of bulk zinc oxide. Electron Lett, 2010, 46(14):1025 doi: 10.1049/el.2010.1282
[15]
Muhammad M, Buswell S C, Dew S K, et al. Nanopatterning of PMMA on insulating surfaces with various anti-charging, schemes using 30 keV electron beam lithography. J Vac Sci Technol B, 2011, 29(06F304):1
[16]
Wang Ying, Han Weihua, Yang Xiang, et al. An efficient dose-compensation method for proximity effect correction. Journal of Semiconductors, 2010, 31(8):086001 doi: 10.1088/1674-4926/31/8/086001
[17]
Satyalakshmi K M, Olkhovets A, Metzler M G, et al. Charge induced pattern distortion in low energy electron beam lithography. J Vac Sci Technol B, 2000, 18(6):3122 doi: 10.1116/1.1321755

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    Received: 26 March 2014 Revised: 26 June 2014 Online: Published: 01 December 2014

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      Article Navigation >  Journal of Semiconductors  > 2014  >  35(12): 126002
      Mingyan Yu, Shirui Zhao, Yupeng Jing, Yunbo Shi, Baoqin Chen. A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography[J]. Journal of Semiconductors, 2014, 35(12): 126002. doi: 10.1088/1674-4926/35/12/126002 M Y Yu, S R Zhao, Y P Jing, Y B Shi, B Q Chen. A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography[J]. J. Semicond., 2014, 35(12): 126002. doi: 10.1088/1674-4926/35/12/126002.Export: BibTex EndNote
      Citation:
      Mingyan Yu, Shirui Zhao, Yupeng Jing, Yunbo Shi, Baoqin Chen. A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography[J]. Journal of Semiconductors, 2014, 35(12): 126002. doi: 10.1088/1674-4926/35/12/126002

      M Y Yu, S R Zhao, Y P Jing, Y B Shi, B Q Chen. A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography[J]. J. Semicond., 2014, 35(12): 126002. doi: 10.1088/1674-4926/35/12/126002.
      Export: BibTex EndNote
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      A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography

      doi: 10.1088/1674-4926/35/12/126002
      • 1.

        The Higher Educational Key Laboratory for Measuring & Control Technology and Instrumentations of Heilongjiang Province, Harbin University of Science and Technology, Harbin 150080, China

      • 2.

        Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61475079) and the National Major Scientific Equipment Developed Special (No. 2011YQ4013608)

      the National Natural Science Foundation of China 61475079

      the National Major Scientific Equipment Developed Special 2011YQ4013608

      More Information
      • Corresponding author: Yu Mingyan, Email:yumingyan@ime.ac.cn
      • Received Date: 2014-03-26
      • Revised Date: 2014-06-26
      • Published Date: 2014-12-01

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