| Citation: |
Liang Zhijun, Wang Zhibin, Wang Li, Zhao Fuli, Yang Shenghong, He Zhenhui, Chen Dihu. Tight Binding of Photoluminescence in the SiC/nc-Si Multi-Layer Film[J]. Journal of Semiconductors, 2006, In Press.
Liang Z J, Wang Z B, Wang L, Zhao F L, Yang S H, He Z H, Chen D H. Tight Binding of Photoluminescence in the SiC/nc-Si Multi-Layer Film[J]. Chin. J. Semicond., 2006, 27(13): 72.
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Tight Binding of Photoluminescence in the SiC/nc-Si Multi-Layer Film
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Abstract
Based on the sp3s tight-binding model proposed by Vogl,the relationship between the band structure and photoluminescence (PL) of the SiC/nc-Si multi-layer is studied.An optimal design of the structure of the SiC/nc-Si multi-layer is presented,theoretically indicating that the {Si}1{SiC}8 supper lattice possesses the highest efficiency of emitting blue light.Multiple SiCx/nc-Si films is fabricated by plasma enhanced chemical vapor deposition and high temperature thermal oxidation.And the structure characteristics of the multiple films is studied by TEM,revealing that the structure of the fabricated multiple films is {Si}1{SiC}5,which is slightly different from the ideal design.Finally,the experimental results of the PL spectrum are analyzed theoretically,and the mechanism of the each light emitting peak is discussed in detail. -
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