Fig. 1.
Binding energies of the impurity states with (solid lines) and without (dashed lines) phonon influence in Al$_{x}$ Ga$_{1-x}$ As quantum wire as a function of composition $x$ with $R$ $=$ 5, 10, 15 nm.
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Zengru Zhao, Gaofeng Wang. Shallow impurity states in AlxGa1-xAs cylindrical quantum wire[J]. Journal of Semiconductors, 2014, 35(8): 082002. doi: 10.1088/1674-4926/35/8/082002
Z R Zhao, G F Wang. Shallow impurity states in AlxGa1-xAs cylindrical quantum wire[J]. J. Semicond., 2014, 35(8): 082002. doi: 10.1088/1674-4926/35/8/082002.
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Shallow impurity states in AlxGa1-xAs cylindrical quantum wire
doi: 10.1088/1674-4926/35/8/082002
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Abstract
Polarons bound to a shallow Coulomb impurity center in cylindrical quantum wire is studied by a variational approach. The binding energies of the shallow impurity states in AlxGa1-xAs cylindrical quantum wire are calculated as functions of the composition x and the impurity position. It is confirmed that the binding energies are reduced obviously by the influence of the electron-phonon interaction and the binding energies are increased with increasing the composition x.-
Keywords:
- quantum wire,
- electron-phonon interaction,
- impurity states
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References
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