| Citation: |
Li Lianbi, Chen Zhiming, Pu Hongbin, Lin Tao, Li Jia, Chen Chunlan, Li Qingmin. Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate[J]. Journal of Semiconductors, 2007, In Press.
Li L B, Chen Z M, Pu H B, Lin T, Li J, Chen C L, Li Q M. Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate[J]. Chin. J. Semicond., 2007, 28(S1): 123.
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Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate
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Abstract
Growth of SiCGe ternary alloy on 6H-SiC in a conventional hot-wall CVD system was studied，and the ternary alloy films were characterized by means of SEM，EDS and PL. It has been found that the samples grown at a narrow temperature region exhibit a two-phase co-growth aspect，which consists of arelatively smooth background region and some randomly distributed sphericalislands.Materials in the two phases were found to have different compositions by EDS. The islands is a Ge-rich material with Ge content of more than 40％, while the Ge content of background iS less than 1％. SEM images show that the two materials seem to have different growth rates and the background seems to be a defect-rich region，where a high density of stacking faults is evident.The PL peaks located at 2.2eV and 2.7eV come from the interband radiative recombination of the islands and background region, respectively.-
Keywords:
- SiC,
- SiCGe,
- island growth
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References
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Proportional views
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