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Effects of the Anodic Alumina Substrate Fabrication Process on a Ta-N Thin Film Integrated Resistor

Zhu Dapeng and Luo Le

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Abstract: A Ta-N thin film resistor was integrated in anodic alumina MCM-D substrate using RF reactive sputtering.The effects of the aluminum anodization process on the microstructure of the Ta-N resistor were studied.The results show that the oxide bulges composed of Ta2O5 and Ta-O-N were formed at the surface of Ta-N film due to the effect of the upper layer of porous anodic alumina.The oxide bulge thickness was related to the anodiztion voltage.The resistivity and TCR of the remaining Ta-N resistor remained unchanged.The resistor was more stable because of the protection of the oxide bulges.

Key words: anodizationTa-N thin film resistorelectrical propertymicrostructure

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    Received: 18 August 2015 Revised: 03 December 2007 Online: Published: 01 April 2008

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      Zhu Dapeng, Luo Le. Effects of the Anodic Alumina Substrate Fabrication Process on a Ta-N Thin Film Integrated Resistor[J]. Journal of Semiconductors, 2008, In Press. Zhu D P, Luo L. Effects of the Anodic Alumina Substrate Fabrication Process on a Ta-N Thin Film Integrated Resistor[J]. J. Semicond., 2008, 29(4): 774.Export: BibTex EndNote
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      Zhu Dapeng, Luo Le. Effects of the Anodic Alumina Substrate Fabrication Process on a Ta-N Thin Film Integrated Resistor[J]. Journal of Semiconductors, 2008, In Press.

      Zhu D P, Luo L. Effects of the Anodic Alumina Substrate Fabrication Process on a Ta-N Thin Film Integrated Resistor[J]. J. Semicond., 2008, 29(4): 774.
      Export: BibTex EndNote

      Effects of the Anodic Alumina Substrate Fabrication Process on a Ta-N Thin Film Integrated Resistor

      • Received Date: 2015-08-18
      • Accepted Date: 2007-07-10
      • Revised Date: 2007-12-03
      • Published Date: 2008-04-03

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