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High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V

Cheng Wei, Zhao Yan, Gao Hanchao, Chen Chen and Yang Naibin

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Abstract: An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1 × 15 μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BV_CEO ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.

Key words: InPdouble heterojunction bipolar transistorplanarization

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    Received: 20 August 2015 Revised: 23 July 2011 Online: Published: 01 January 2012

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      Cheng Wei, Zhao Yan, Gao Hanchao, Chen Chen, Yang Naibin. High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V[J]. Journal of Semiconductors, 2012, 33(1): 014004. doi: 10.1088/1674-4926/33/1/014004 Cheng W, Zhao Y, Gao H C, Chen C, Yang N B. High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V[J]. J. Semicond., 2012, 33(1): 014004. doi: 10.1088/1674-4926/33/1/014004.Export: BibTex EndNote
      Citation:
      Cheng Wei, Zhao Yan, Gao Hanchao, Chen Chen, Yang Naibin. High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V[J]. Journal of Semiconductors, 2012, 33(1): 014004. doi: 10.1088/1674-4926/33/1/014004

      Cheng W, Zhao Y, Gao H C, Chen C, Yang N B. High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V[J]. J. Semicond., 2012, 33(1): 014004. doi: 10.1088/1674-4926/33/1/014004.
      Export: BibTex EndNote

      High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V

      doi: 10.1088/1674-4926/33/1/014004
      • Received Date: 2015-08-20
      • Accepted Date: 2011-06-16
      • Revised Date: 2011-07-23
      • Published Date: 2011-12-28

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