SEMICONDUCTOR TECHNOLOGY

Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET

Jin Zhang, Yuling Liu, Chenqi Yan, Yangang He and Baohong Gao

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 Corresponding author: Liu Yuling,Email:liuyl@jingling.com.cn

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Abstract: The replacement metal gate (RMG) defectivity performance control is very challenging in high-k metal gate (HKMG) chemical mechanical polishing (CMP). In this study, three major defect types, including fall-on particles, micro-scratch and corrosion have been investigated. The research studied the effects of polishing pad, pressure, rotating speed, flow rate and post-CMP cleaning on the three kinds of defect, which finally eliminated the defects and achieved good surface morphology. This study will provide an important reference value for the future research of aluminum metal gate CMP.

Key words: chemical mechanical planarization (CMP)high-k metal gate (HKMG)defectivity controlsurface morphology



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Fig. 1.  (Color online) Micro-scratches on the wafer surface observed by metallurgical microscope. (a) Polished by hard pad. (b) Polished by soft pad.

Fig. 2.  Aluminum surface roughness and remove rate as a function of polishing pressure.

Fig. 3.  Aluminum surface roughness as a function of rotating speed.

Fig. 4.  Aluminum surface roughness as a function of slurry flow rate.

Fig. 5.  (Color online) The corrosion defect observed by metallurgical microscope.

Fig6.  (Color online) The surface morphology of aluminum film before and after post-CMP cleaning observed by metallurgical microscope and AFM. (a), (c) Before cleaning. (b), (d) After cleaning.

Fig7.  (Color online) Surface morphology after the optimized process observed by AFM.

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Table 1.   The process conditions of CMP.

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    Received: 25 July 2015 Revised: Online: Published: 01 April 2016

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      Jin Zhang, Yuling Liu, Chenqi Yan, Yangang He, Baohong Gao. Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET[J]. Journal of Semiconductors, 2016, 37(4): 046001. doi: 10.1088/1674-4926/37/4/046001 J Zhang, Y L Liu, C Q Yan, Y G He, B H Gao. Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET[J]. J. Semicond., 2016, 37(4): 046001. doi: 10.1088/1674-4926/37/4/046001.Export: BibTex EndNote
      Citation:
      Jin Zhang, Yuling Liu, Chenqi Yan, Yangang He, Baohong Gao. Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET[J]. Journal of Semiconductors, 2016, 37(4): 046001. doi: 10.1088/1674-4926/37/4/046001

      J Zhang, Y L Liu, C Q Yan, Y G He, B H Gao. Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET[J]. J. Semicond., 2016, 37(4): 046001. doi: 10.1088/1674-4926/37/4/046001.
      Export: BibTex EndNote

      Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET

      doi: 10.1088/1674-4926/37/4/046001
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      Project supported by the Major National Science and Technology Special Projects (No. 2009ZX02308), the Natural Science Foundation for the Youth of Hebei Province (Nos. F2012202094, F2015202267), and the Outstanding Youth Science and Technology Innovation Fund of Hebei University of Technology (No. 2013010).

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      • Corresponding author: Liu Yuling,Email:liuyl@jingling.com.cn
      • Received Date: 2015-07-25
      • Accepted Date: 2015-11-01
      • Published Date: 2016-01-25

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