| Citation: |
Zhou Xin, Gu Shulin, Zhu Shunming, Ye Jiandong, Liu Wei, Liu Songmin, Hu Liqun, Zheng Youdou, Zhang Rong, Shi Yi. Fabrication and Emission Properties of a n-ZnO/p-GaN Heterojunction Light-Emitting Diode[J]. Journal of Semiconductors, 2006, In Press.
Zhou X, Gu S L, Zhu S M, Ye J and o N, Liu W, Liu S M, Hu L Q, Zheng Y D, Zhang R, Shi Y. Fabrication and Emission Properties of a n-ZnO/p-GaN Heterojunction Light-Emitting Diode[J]. Chin. J. Semicond., 2006, 27(2): 249.
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Fabrication and Emission Properties of a n-ZnO/p-GaN Heterojunction Light-Emitting Diode
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Abstract
We report the fabrication and characterization of light-emitting diodes based on n-ZnO/p-GaN heterojunctions.The n-type ZnO epilayer is deposited by metalorganic chemical vapor deposition (MOCVD) on a MOCVD grown Mg-doped p-GaN layer to form a p-n heterojunction.During the etching process, the relation between the etching depth and the etching time is linear in a HF and NH4Cl solution of a certain ratio.The etching rates of the SiO2 and ZnO are well controlled,which are essential for device fabrication.The current-voltage relationship of this heterojunction shows a diode-like rectifying behavior.In contrast to previous reports,electroluminescence (EL) emissions are observed by the naked eye at room temperature from the n-ZnO/p-GaN heterojunction under forward- and reverse-bias.The origins of these EL emissions are discussed in comparison with the photoluminescence spectra. -
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