SEMICONDUCTOR DEVICES

A novel terminal structure for total dose irradiation hardened of a P-VDMOS

Zhaohuan Tang1, , Rongkan Liu2, Kaizhou Tan1, Jun Luo2, Gangyi Hu1, Ruzhang Li1, Huaping Ren3 and Bin Wang2

+ Author Affiliations

 Corresponding author: Tang Zhaohuan, Email:sisc_tang@163.com

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Abstract: Using positive surface charge instead of traditional γ-ray total dose irradiation, the electric field distribution of a P-channel VDMOS terminal has been analyzed. A novel terminal structure for improving the total dose irradiation hardened of P-channel VDMOS has been proposed, and the structure is simulated and demonstrated with a -150 V P-channel VDMOS. The results show that the peak current density is reduced from 5.51×103 A/cm2 to 2.01×103 A/cm2, and the changed value of the breakdown voltage is 2.5 V at 500 krad(Si). Especially, using 60Co and X-ray to validate the results, which strictly match with the simulated values, there is not any added mask or process to fabricate the novel structure, of which the process is compatible with common P-channel VDMOS processes. The novel terminal structure can be widely used in total irradiation hardened P-channel VDMOS design and fabrication, which holds a great potential application in the space irradiation environment.

Key words: P-channel VDMOStotal dose irradiation hardenedstop field limited ringbreakdown voltage



[1]
Li Zehong, Zhang Lei, Tan Kaizhou. Total dose radiation hardened power VDMOS device. Journal of UESTC, 2008, 37(4):621(in Chinese)
[2]
Raparla V A K, Lee S C, Schrimpf R D, et al. A model of radiation effects in nitride-oxide films for power MOSFET applications. Solid-State Electron, 2003, 47:775 doi: 10.1016/S0038-1101(02)00375-1
[3]
Gao Bo, Yu Xuefeng, Ren Diyuan, et al. Total ionizing dose effects and annealing behavior for domestic VDMOS devices. Journal of Semiconductors, 2010, 31(4):044007 doi: 10.1088/1674-4926/31/4/044007
[4]
Cai Xiaowu, Hai Chaohe, Wang Lixin, et al. Gamma irradiation induced oxide trapped charge and interface charge in power VDMOS. Journal of Functional Material and Devices, 2008, 14(5):621(in Chinese)
[5]
Xue Yuxiong, Cao Zhou, Guo Zuyou, et al. Study of total ionization dose test of power MOSFET for satellite application. Nuclear Electronics & Detection Technology, 2008, 28(3):538(in Chinese)
Fig. 1.  An energy band diagram for MOS structure during irradiation with positive bias on the gate and electron-hole motion.

Fig. 2.  The common terminal structure of a P-VDMOS.

Fig. 3.  The proposed terminal structure of a P-VDMOS.

Fig. 4.  Relationship curves between breakdown voltage and $d$.

Fig. 5.  Field distribution of the proposed structure and common structure at the same condition.

Fig. 6.  Total current distribution of terminal structure. (a) Common structure. (b) Proposed structure.

Fig. 7.  Breakdown curves of the proposed and common structure.

Fig. 8.  Relationship curves between breakdown and surface charges as $Q_{\rm ss}$ changes from 9 $\times$ 10$^{10}$ to 6 $\times $ 10$^{11}$ at a 3 $\times$ 10$^{10}$ step.

Fig. 9.  Chip photograph of a 150 V P-VDMOS.

Fig. 10.  Resulting curves between experiment and simulation.

Table 1.   Test results of P-VDMOS designed in proposed terminal structure at 0 and 500 krad(Si).

[1]
Li Zehong, Zhang Lei, Tan Kaizhou. Total dose radiation hardened power VDMOS device. Journal of UESTC, 2008, 37(4):621(in Chinese)
[2]
Raparla V A K, Lee S C, Schrimpf R D, et al. A model of radiation effects in nitride-oxide films for power MOSFET applications. Solid-State Electron, 2003, 47:775 doi: 10.1016/S0038-1101(02)00375-1
[3]
Gao Bo, Yu Xuefeng, Ren Diyuan, et al. Total ionizing dose effects and annealing behavior for domestic VDMOS devices. Journal of Semiconductors, 2010, 31(4):044007 doi: 10.1088/1674-4926/31/4/044007
[4]
Cai Xiaowu, Hai Chaohe, Wang Lixin, et al. Gamma irradiation induced oxide trapped charge and interface charge in power VDMOS. Journal of Functional Material and Devices, 2008, 14(5):621(in Chinese)
[5]
Xue Yuxiong, Cao Zhou, Guo Zuyou, et al. Study of total ionization dose test of power MOSFET for satellite application. Nuclear Electronics & Detection Technology, 2008, 28(3):538(in Chinese)
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    Received: 25 September 2013 Revised: 01 January 2014 Online: Published: 01 May 2014

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      Zhaohuan Tang, Rongkan Liu, Kaizhou Tan, Jun Luo, Gangyi Hu, Ruzhang Li, Huaping Ren, Bin Wang. A novel terminal structure for total dose irradiation hardened of a P-VDMOS[J]. Journal of Semiconductors, 2014, 35(5): 054005. doi: 10.1088/1674-4926/35/5/054005 Z H Tang, R K Liu, K Z Tan, J Luo, G Y Hu, R Z Li, H P Ren, B Wang. A novel terminal structure for total dose irradiation hardened of a P-VDMOS[J]. J. Semicond., 2014, 35(5): 054005. doi: 10.1088/1674-4926/35/5/054005.Export: BibTex EndNote
      Citation:
      Zhaohuan Tang, Rongkan Liu, Kaizhou Tan, Jun Luo, Gangyi Hu, Ruzhang Li, Huaping Ren, Bin Wang. A novel terminal structure for total dose irradiation hardened of a P-VDMOS[J]. Journal of Semiconductors, 2014, 35(5): 054005. doi: 10.1088/1674-4926/35/5/054005

      Z H Tang, R K Liu, K Z Tan, J Luo, G Y Hu, R Z Li, H P Ren, B Wang. A novel terminal structure for total dose irradiation hardened of a P-VDMOS[J]. J. Semicond., 2014, 35(5): 054005. doi: 10.1088/1674-4926/35/5/054005.
      Export: BibTex EndNote

      A novel terminal structure for total dose irradiation hardened of a P-VDMOS

      doi: 10.1088/1674-4926/35/5/054005
      Funds:

      the Pre-Research Foundation 51311050202

      Project supported by the Pre-Research Foundation (No. 51311050202)

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      • Corresponding author: Tang Zhaohuan, Email:sisc_tang@163.com
      • Received Date: 2013-09-25
      • Revised Date: 2014-01-01
      • Published Date: 2014-05-05

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