Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 51-55
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Optical Characteristics of Strained Self-Organized InAs/GaAs Ouantum Dot Materials and Laser Diodes

Gian Jiajun, Xu Bo, Chen Yonghai, Ye Xiaoling, Han Qin and Wang Zhanguo

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Abstract: Photoluminescence ( PLD and electrolumineScence (ELD properties of strained self-assembled InAS/GaAS quantum dots ( GDSD structure grown by molecular-beam epitaxy technique are presented. A comparative analysis is made of optical characteristics for laSer diodes emitting at 1. 08pm With InAS/GaAS GDS in the active region. The maximum CW output of 2. 74W ( two facets and internal quantum efficiency of 87% are achieved at room temperature in 100pm Wide Strips and 1. 6mm cavity length laser diode with uncoated facets.

Key words: strained self-organized quantum dots, electroluminescence spectras InAs quantum dots, quantum dot lasers, molecular beam epitaxy,  电致发光谱,  InAS 量子点结构,  量子点激光器,  MBE 生长

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(S1): 51-55
      Gian Jiajun, Xu Bo, Chen Yonghai, Ye Xiaoling, Han Qin, Wang Zhanguo. Optical Characteristics of Strained Self-Organized InAs/GaAs Ouantum Dot Materials and Laser Diodes[J]. Journal of Semiconductors, 2003, In Press. Gian J, Xu B, Chen Y H, Ye X L, Han Q, Wang Z G. Optical Characteristics of Strained Self-Organized InAs/GaAs Ouantum Dot Materials and Laser Diodes[J]. Chin. J. Semicond., 2003, 24(S1): 51.Export: BibTex EndNote
      Citation:
      Gian Jiajun, Xu Bo, Chen Yonghai, Ye Xiaoling, Han Qin, Wang Zhanguo. Optical Characteristics of Strained Self-Organized InAs/GaAs Ouantum Dot Materials and Laser Diodes[J]. Journal of Semiconductors, 2003, In Press.

      Gian J, Xu B, Chen Y H, Ye X L, Han Q, Wang Z G. Optical Characteristics of Strained Self-Organized InAs/GaAs Ouantum Dot Materials and Laser Diodes[J]. Chin. J. Semicond., 2003, 24(S1): 51.
      Export: BibTex EndNote
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      Optical Characteristics of Strained Self-Organized InAs/GaAs Ouantum Dot Materials and Laser Diodes

      • Laboratory of Semiconductor Materials Science, Institute of Semiconductors, The Chinese Acacemy of Sciences, Bezjzng 100083, China,Laboratory of Semiconductor Materials Science, Institute of Semiconductors, The Chinese Acacemy of Sciences, Bezjzng 100083, China,Laboratory of Semiconductor Materials Science, Institute of Semiconductors, The Chinese Acacemy of Sciences, Bezjzng 100083, China,Laboratory of Semiconductor Materials Science, Institute of Semiconductors, The Chinese Acacemy of Sciences, Bezjzng 100083, China,National Research Center for Optoelectronic Technology, Institute of Semiconductors, The Chinese Acacemy of Sciences, Beijing 100083, China and Laboratory of Semiconductor Materials Science, Institute of Semiconductors, The Chinese Acacemy of Sciences, Bezjzng 100083, China

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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