| Citation: |
Wang Bo, Tan Jingfei, Zhang Wenliang, Chu Weili, Zhu Yangjun. A simulation study on a novel trench SJ IGBT[J]. Journal of Semiconductors, 2012, 33(11): 114002. doi: 10.1088/1674-4926/33/11/114002
Wang B, Tan J F, Zhang W L, Chu W L, Zhu Y J. A simulation study on a novel trench SJ IGBT[J]. J. Semicond., 2012, 33(11): 114002. doi: 10.1088/1674-4926/33/11/114002.
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A simulation study on a novel trench SJ IGBT
doi: 10.1088/1674-4926/33/11/114002
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Abstract
An overall analysis of the trench superjunction insulated gate bipolar transistor (SJ IGBT) is presented and a detailed comparison between a trench SJ IGBT and a trench field stop IGBT is made by simulating with Sentaurus TCAD. More specifically, simulation results show that the trench SJ IGBT exhibits a breakdown voltage that is raised by 100 V while the on-state voltage is reduced by 0.2 V. At the same time, the turn-off loss is decreased by 50%. The effect of charge imbalance on the static and dynamic characteristics of the trench SJ IGBT is studied, and the trade-off between parameters and their sensitivity versus charge imbalance is discussed.-
Keywords:
- IGBT,
- superjunction,
- SJBT,
- charge imbalance,
- on-state voltage
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] -
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