SEMICONDUCTOR DEVICES

Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

Li Qi, Wang Weidong, Zhao Qiuming and Wei Xueming

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Abstract: A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology (SB) is reported. The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field. The substrate bias strengthens the charge share effect of the drift region near the source, and the vertical electric field peak under the drain is decreased, which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region. The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97% compared with a conventional LDMOS, while maintaining a low on-resistance.

Key words: substrate bias

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    Received: 20 August 2015 Revised: 25 December 2011 Online: Published: 01 May 2012

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      Li Qi, Wang Weidong, Zhao Qiuming, Wei Xueming. Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure[J]. Journal of Semiconductors, 2012, 33(5): 054004. doi: 10.1088/1674-4926/33/5/054004 Li Q, Wang W D, Zhao Q M, Wei X M. Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure[J]. J. Semicond., 2012, 33(5): 054004. doi: 10.1088/1674-4926/33/5/054004.Export: BibTex EndNote
      Citation:
      Li Qi, Wang Weidong, Zhao Qiuming, Wei Xueming. Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure[J]. Journal of Semiconductors, 2012, 33(5): 054004. doi: 10.1088/1674-4926/33/5/054004

      Li Q, Wang W D, Zhao Q M, Wei X M. Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure[J]. J. Semicond., 2012, 33(5): 054004. doi: 10.1088/1674-4926/33/5/054004.
      Export: BibTex EndNote

      Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

      doi: 10.1088/1674-4926/33/5/054004
      • Received Date: 2015-08-20
      • Accepted Date: 2011-11-02
      • Revised Date: 2011-12-25
      • Published Date: 2012-04-11

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