| Citation: |
Wang Lihui, Gan Guoyou, Sun Jialin, Yan Jikang. Preparation and characterization of layered low-voltage ZnO varistors[J]. Journal of Semiconductors, 2009, 30(3): 033002. doi: 10.1088/1674-4926/30/3/033002
Wang L H, Gan G Y, Sun J L, Yan J K. Preparation and characterization of layered low-voltage ZnO varistors[J]. J. Semicond., 2009, 30(3): 033002. doi: 10.1088/1674-4926/30/3/033002.
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Preparation and characterization of layered low-voltage ZnO varistors
doi: 10.1088/1674-4926/30/3/033002
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Abstract
Double-layered, low-voltage ZnO varistors have been fabricated by feeding two kinds of ZnO powders into a die using dry extrusion molding. Compared with ZnO varistors fabricated by the conventional route, the layered ZnO varistors have larger non-linear coefficients, lower breakdown electric fields, and lower leakage current densities. The improvement in electrical performance of the layered low-voltage ZnO varistors is attributed to the asymmetric band structure at grain boundary between the two layers.-
Keywords:
- layered ZnO varistor,
- non-linearity,
- electrical properties
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References
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