High Temperature 1.3μm AlGaInAs/InP Strained Multiquantum Well Laser Grown by Metalorganic Vapor Phase Epitaxy

Bo Chen(陈博) , Xiaojie Wang(汪孝杰) and Wei Wang(王圩)

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Abstract:

We have investigated the AlGaInA/InP compressively strained layer separate confinement heterostructure multiquantum well (SCH-MQW) laser structure, which was grown by Low-Pressure Metalorganic Vapor phase Epitaxy. The T₀ of AlGaInA/InP SCH-MQW buried-heterostructure lasers was up to 110K at temperatures between 20℃ and 60℃. The drop of slope efficiencies was only 0.54dB at temperatures between 20℃ and 80℃.