Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 202-204
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Nano giant magneto-Impedance effect and magnetic sensors

Yang Xielong, Yang Jiexin, Dai Wenkai, Zhao Zhenjie, Ma Xueming, Yu Jianguo and Ding YongZhi

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Abstract: A new magnetic sensor utiliZing the magneto-impedance effect in nanocrystalline materials is developed, which has advantageous features in high sensitivity, temperature stability, and long operation life comparing with conventional magnetic sensors such as Flux-Gate magnetometer, ~all devices, magneto-resistance sensors. They have generated successful applications in car speed measuring, engine s time ignition and other industy control system etal.

Key words: giant magnero-impedance effect,  magnetic sensors,  nanocrystalline

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(S1): 202-204
      Yang Xielong, Yang Jiexin, Dai Wenkai, Zhao Zhenjie, Ma Xueming, Yu Jianguo, Ding YongZhi. Nano giant magneto-Impedance effect and magnetic sensors[J]. Journal of Semiconductors, 2003, In Press. Yang X L, Yang J X, Dai W K, Zhao Z J, Ma X M, Yu J G, Ding Y Z. Nano giant magneto-Impedance effect and magnetic sensors[J]. Chin. J. Semicond., 2003, 24(S1): 202.Export: BibTex EndNote
      Citation:
      Yang Xielong, Yang Jiexin, Dai Wenkai, Zhao Zhenjie, Ma Xueming, Yu Jianguo, Ding YongZhi. Nano giant magneto-Impedance effect and magnetic sensors[J]. Journal of Semiconductors, 2003, In Press.

      Yang X L, Yang J X, Dai W K, Zhao Z J, Ma X M, Yu J G, Ding Y Z. Nano giant magneto-Impedance effect and magnetic sensors[J]. Chin. J. Semicond., 2003, 24(S1): 202.
      Export: BibTex EndNote
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      Nano giant magneto-Impedance effect and magnetic sensors

      • Depcrtment of Physics, East China Normal University, Shanghai 200062, China

      • Institute of Huatai Nano-Magnetic-Sensitive Devices, Shanghai 200062, China,Depcrtment of Physics, East China Normal University, Shanghai 200062, China

      • Institute of Huatai Nano-Magnetic-Sensitive Devices, Shanghai 200062, China,Depcrtment of Physics, East China Normal University, Shanghai 200062, China

      • Institute of Huatai Nano-Magnetic-Sensitive Devices, Shanghai 200062, China,Depcrtment of Physics, East China Normal University, Shanghai 200062,Depcrtment of Physics, East China Normal University, Shanghai 200062,Institute of Huatai Nano-Magnetic-Sensitive Devices, Shanghai 200062, China and Institute of Huatai Nano-Magnetic-Sensitive Devices, Shanghai 200062, China

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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