SEMICONDUCTOR MATERIALS

High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned process

Yingchun Fu, Xiaofeng Wang, Liuhong Ma, Yaling Zhou, Xiang Yang, Xiaodong Wang and Fuhua Yang

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Key words: fully confinednanocontactsself-alignedphase change random access memory



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Fig1.  (Color online) Process flow chart. (a) Insulating layer/PCM/sacrificial layer deposition. (b) Lithography. (c) Dry etching of PCM/sacrificial layer. (d) Electrode film sputtering. (e) Lithography. (f) Dry etching of electrode film. (g) Wet etching of sacrificial layer. (h) Additional PCM NW removal. (i) Lift-off. (j) Lithography. (k) Dry etching of tungsten film. (l) Device passivation and the formation of testing pads.

Fig2.  (Color online) The results of the process. (a) Top-view of PMMA resist as both positive and negative resist in the same fabrication process. (b) Top-view and (c) oblique-view of negative PMMA resist before dry etching. (d) Top-view of negative PMMA resist blown down with the nitrogen gun. (e) GST/SiO$_{2}$ NWs after dry etching with single line layout. (f) Improved lithography layout. (g) Tungsten film of 60 nm covering SiO$_{2}$/GST NWs after dry etching with H-shaped layout. (h) After sacrificial layer removal. (i) Positive PMMA resist with window-gap based layout. (j) PCM node after lift-off. (k) Photoresist mask covering PCM node for device separation.

Fig3.  Process results of window-gap based layout. (a), (b) Schematic diagram of the edge shrinking effect. (c) Tungsten after dry etch with different window-gap size and exposure dose.

Fig4.  (a) $I$-$V$ (current-sweeping mode) characteristic. The threshold voltage is 3.45 V and the corresponding pulse current is 23.6 $\mu $A. (b) The pulsed $R$-$V$ characteristic (RESET and SET processes). $V_{\rm set}$ $=$ 4.3 V with the pulse width of 100 ns (pulse falling 3 ns). $V_{\rm reset}$ $=$ 6.8 V with the pulse width of 40 ns (pulse falling 3 ns).

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    Received: 07 May 2015 Revised: Online: Published: 01 December 2015

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      Yingchun Fu, Xiaofeng Wang, Liuhong Ma, Yaling Zhou, Xiang Yang, Xiaodong Wang, Fuhua Yang. High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned process[J]. Journal of Semiconductors, 2015, 36(12): 123004. doi: 10.1088/1674-4926/36/12/123004 Y C Fu, X F Wang, L H Ma, Y L Zhou, X Yang, X D Wang, F H Yang. High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned process[J]. J. Semicond., 2015, 36(12): 123004. doi: 10.1088/1674-4926/36/12/123004.Export: BibTex EndNote
      Citation:
      Yingchun Fu, Xiaofeng Wang, Liuhong Ma, Yaling Zhou, Xiang Yang, Xiaodong Wang, Fuhua Yang. High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned process[J]. Journal of Semiconductors, 2015, 36(12): 123004. doi: 10.1088/1674-4926/36/12/123004

      Y C Fu, X F Wang, L H Ma, Y L Zhou, X Yang, X D Wang, F H Yang. High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned process[J]. J. Semicond., 2015, 36(12): 123004. doi: 10.1088/1674-4926/36/12/123004.
      Export: BibTex EndNote

      High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned process

      doi: 10.1088/1674-4926/36/12/123004
      Funds:

      Project supported by the National Basic Research Program of China(No. 2011CB922103), and the National Natural Science Foundation of China(Nos. 61376420, 61404126, A040203).

      More Information
      • Corresponding author: Fu Yingchun,Email:ycfu@semi.ac.cn;Yang Fuhua,Email:fhyang@semi.ac.cn
      • Received Date: 2015-05-07
      • Accepted Date: 2015-05-27
      • Published Date: 2015-01-25

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