| Citation: |
Hou Yang, Zhang Jian, Li Lingyun, Sun Xiaowei. 60GHz Wideband LNA MMIC with High Gain[J]. Journal of Semiconductors, 2008, In Press.
Hou Y, Zhang J, Li L Y, Sun X W. 60GHz Wideband LNA MMIC with High Gain[J]. J. Semicond., 2008, 29(7): 1373.
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60GHz Wideband LNA MMIC with High Gain
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Abstract
A wideband low noise amplifier (LNA) MMIC was designed and fabricated with 0.15μm GaAs pHEMT process.It obtains high gain by means of adopting four stages topology.The chip size is 2mm×1mm.Covering 45~65GHz,it achieves a maximum 20.5dB gain and low VSWR.It has the advantages of higher gain,wider bandwidth and lower power consuming.This chip can be widely applied in 60GHz wideband wireless communication system. -
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