| Citation: |
Zhang Yu, Wang Guowei, Tang Bao, Xu Yingqiang, Xu Yun, Song Guofeng. Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers[J]. Journal of Semiconductors, 2011, 32(10): 103002. doi: 10.1088/1674-4926/32/10/103002
Zhang Y, Wang G W, Tang B, Xu Y Q, Xu Y, Song G F. Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers[J]. J. Semicond., 2011, 32(10): 103002. doi: 10.1088/1674-4926/32/10/103002.
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Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
doi: 10.1088/1674-4926/32/10/103002
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Abstract
2 μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy (MBE). The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K. The optimal growth temperature of quantum wells is 440 ℃. The PL peak wavelength of quantum wells at 300 K is 1.98 μm, and the FWHM is 115 nm. Tellurium-doped GaSb buffer layers were optimized by Hall measurement. The optimal doping concentration is 1.127 × 1018 cm-3 and the resistivity is 5.295 × 10-3 Ω·cm.-
Keywords:
- InGaSb,
- AlGaAsSb,
- strained quantum wells,
- Te doped
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] -
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