| Citation: |
Wang Chenwei, Liu Yuling, Niu Xinhuan, Tian Jianying, Gao Baohong, Zhang Xiaoqiang. An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers[J]. Journal of Semiconductors, 2012, 33(4): 046001. doi: 10.1088/1674-4926/33/4/046001
Wang C W, Liu Y L, Niu X H, Tian J Y, Gao B H, Zhang X Q. An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers[J]. J. Semicond., 2012, 33(4): 046001. doi: 10.1088/1674-4926/33/4/046001.
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An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers
doi: 10.1088/1674-4926/33/4/046001
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Abstract
We have developed an alkaline barrier slurry (named FA/O slurry) for barrier removal and evaluated its chemical mechanical planarization (CMP) performance through comparison with a commercially developed barrier slurry. The FA/O slurry consists of colloidal silica, which is a complexing and an oxidizing agent, and does not have any inhibitors. It was found that the surface roughness of copper blanket wafers polished by the FA/O slurry was lower than the commercial barrier slurry, demonstrating that it leads to a better surface quality. In addition, the dishing and electrical tests also showed that the patterned wafers have a lower dishing value and sheet resistance as compared to the commercial barrier slurry. By comparison, the FA/O slurry demonstrates good planarization performance and can be used for barrier CMP.-
Keywords:
- barrier CMP,
- alkaline barrier slurry,
- surface roughness,
- dishing
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] -
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