J. Semicond. > 2015, Volume 36 > Issue 8 > 083003, doi: 10.1088/1674-4926/36/8/083003
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SEMICONDUCTOR MATERIALS

Recent progress in research of f-SiC codoped with N-B-Al pairs for optoelectronics

Shiyi Zhuo, Xi Liu, Xuechao Liu and Erwei Shi

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 Corresponding author: Liu Xi, Liuxi@mil.sic.ac.cn

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Abstract: This paper reviewed the advances in fluorescent SiC codoped with nitrogen, boron and aluminum dopants applied to optoelectronics in recent years. The progress aspects in research of the fluorescent property, recombination theory, experiment, and construction design were discussed. The advantages that fluorescent SiC based white LEDs compared with conventional white LEDs were analyzed. It was confirmed that fluorescent SiC is a promising material to replace phosphor in the luminous field. Finally, the problems in the study of fluorescent 4H-SiC were pointed out.

Key words: f-SiC, optoelectronics, LED, DA codoped



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Fig1.  (a) UV excitation spectrum and photoluminescence spectra of N-Al and N-B doped SiC. The photoluminescence spectra were referred from Reference [17]. (b) CIE chromaticity coordinate plot of f-SiCs. The original data were referred from Reference [18].

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Fig2.  (Color online) Schematic illustration of band gap, energy levels, recombination centers and photon exciting process of N-Al doped SiC and N-B doped SiC composed layers.

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Fig3.  (a) The peak and its FWHM of photoluminescence spectra of N-B codoped SiC. The data are from References [32,30,31]. (b) The output spectra of UV LED over coated by a N-B doped SiC layer. The original data are from Reference [33].

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Fig4.  (a) Prototype structure of f-SiC based white LED. In the structure the f-SiC layers, UV stack and insert layers between two of them were simplified as one layer. (b) Emission photo of N-B codoped SiC excited by two commercial UV LEDs[34]

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Fig5.  SEM figure of f-SiC substrate that was fabricated by an antireflective sub-wavelength process. The original figure was from Reference [35].

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Table 1.   Energy levels of N, Al, and B in 4H and 6H-SiC. The values in this table are mainly from Reference [19].

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    Received: 29 January 2015 Revised: Online: Published: 01 August 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(8): 083003
      Shiyi Zhuo, Xi Liu, Xuechao Liu, Erwei Shi. Recent progress in research of f-SiC codoped with N-B-Al pairs for optoelectronics[J]. Journal of Semiconductors, 2015, 36(8): 083003. doi: 10.1088/1674-4926/36/8/083003 S Y Zhuo, X Liu, X C Liu, E W Shi. Recent progress in research of f-SiC codoped with N-B-Al pairs for optoelectronics[J]. J. Semicond., 2015, 36(8): 083003. doi: 10.1088/1674-4926/36/8/083003.Export: BibTex EndNote
      Citation:
      Shiyi Zhuo, Xi Liu, Xuechao Liu, Erwei Shi. Recent progress in research of f-SiC codoped with N-B-Al pairs for optoelectronics[J]. Journal of Semiconductors, 2015, 36(8): 083003. doi: 10.1088/1674-4926/36/8/083003

      S Y Zhuo, X Liu, X C Liu, E W Shi. Recent progress in research of f-SiC codoped with N-B-Al pairs for optoelectronics[J]. J. Semicond., 2015, 36(8): 083003. doi: 10.1088/1674-4926/36/8/083003.
      Export: BibTex EndNote
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      Recent progress in research of f-SiC codoped with N-B-Al pairs for optoelectronics

      doi: 10.1088/1674-4926/36/8/083003

      • Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

      Funds:

      Project supported by the Shanghai Rising-Star Program (No. 13QA1403800), the Innovation Program of the Chinese Academy of Sciences (No. KJCX2-EW-W10), the National High-Tech R&D Program of China (Nos. 2013AA031603, 2014AA032602), and the National Natural Science Foundation of China (No. 31275136).

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      • Corresponding author: Liu Xi, Liuxi@mil.sic.ac.cn
      • Received Date: 2015-01-29
      • Accepted Date: 2015-03-19
      • Published Date: 2015-01-25

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