Abstract: A new process for gate dielectric fabrication named in situ steam generation (ISSG) is reported.Based on the Deal-Grove model,an oxidation mechanism is proposed to break the Si-Si bond by an active atomic O and form a Si-O-Si bond during the oxidation process.The breakdown characteristics are investigated through a MOS-capacitor for both ISSG and furnace wet oxidation.The gate dielectric material generated by ISSG oxidation has a superior electrical performance owing to sufficient oxidation of weak Si-Si bonds relative to furnace wet oxidation,indicating a promising application in sub-micron IC device manufacturing.

Key words: ISSG, gate dielectric, breakdown